STGFW20V60DF datasheet(4/15 Pages) STMICROELECTRONICS

номер детали	STGFW20V60DF

подробное описание детали	Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

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Electrical characteristics

STGFW20V60DF

4/15

DocID026148 Rev 2

2

Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 20 A

1.8

2.2

V

VGE = 15 V, IC = 20 A,

TJ = 125 °C

2.15

VGE = 15 V, IC = 20 A,

TJ = 175 °C

2.3

VF

Forward on-voltage

IF = 20 A

1.7

2.2

V

IF = 20 A, TJ = 125 °C

1.55

IF = 20 A, TJ = 175 °C

1.3

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 600 V

25

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

250

µA

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz,

VGE = 0 V

-

2800

-

pF

Coes

Output capacitance

-

110

-

pF

Cres

Reverse transfer capacitance

-

64

-

pF

Qg

Total gate charge

VCC = 480 V, IC = 20 A,

VGE = 0 to 15 V

(see Figure 28: " Gate

charge test circuit")

-

116

-

nC

Qge

Gate-emitter charge

-

24

-

nC

Qgc

Gate-collector charge

-

50

-

nC

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Аналогичное описание - STGFW20V60DF

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