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STGFW20V60DF датащи(PDF) 4 Page - STMicroelectronics |
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STGFW20V60DF датащи(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STGFW20V60DF 4/15 DocID026148 Rev 2 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 20 A 1.8 2.2 V VGE = 15 V, IC = 20 A, TJ = 125 °C 2.15 VGE = 15 V, IC = 20 A, TJ = 175 °C 2.3 VF Forward on-voltage IF = 20 A 1.7 2.2 V IF = 20 A, TJ = 125 °C 1.55 IF = 20 A, TJ = 175 °C 1.3 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V ICES Collector cut-off current VGE = 0 V, VCE = 600 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V 250 µA Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V - 2800 - pF Coes Output capacitance - 110 - pF Cres Reverse transfer capacitance - 64 - pF Qg Total gate charge VCC = 480 V, IC = 20 A, VGE = 0 to 15 V (see Figure 28: " Gate charge test circuit") - 116 - nC Qge Gate-emitter charge - 24 - nC Qgc Gate-collector charge - 50 - nC |
Аналогичный номер детали - STGFW20V60DF |
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Аналогичное описание - STGFW20V60DF |
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