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STGW40H120F2 датащи(PDF) 5 Page - STMicroelectronics

номер детали STGW40H120F2
подробное описание детали  Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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DocID025853 Rev 3
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STGW40H120F2, STGWA40H120F2
Electrical characteristics
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
see Figure 23
18
-
ns
tr
Current rise time
37
-
ns
(di/dt)on
Turn-on current slope
1755
-
A/µs
td(off)
Turn-off delay time
152
-
ns
tf
Current fall time
83
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the external diode. The diode is the same of the co-packed
STGW40H120DF2
Turn-on switching losses
1.0
-
mJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
1.32
-
mJ
Ets
Total switching losses
2.32
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 40 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 23
36
-
ns
tr
Current rise time
20
-
ns
(di/dt)on
Turn-on current slope
1580
-
A/µs
td(off)
Turn-off delay time
161
-
ns
tf
Current fall time
190
-
ns
Eon
(1)
Turn-on switching losses
1.81
-
mJ
Eoff
(2)
Turn-off switching losses
2.46
-
mJ
Ets
Total switching losses
4.27
-
mJ
tsc
Short-circuit withstand time
VCE = 600 V, VGE = 15 V,
TJ = 150 °C,
5-
μs


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