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STGW40M120DF3 датащи(PDF) 1 Page - STMicroelectronics |
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STGW40M120DF3 датащи(HTML) 1 Page - STMicroelectronics |
1 / 18 page This is information on a product in full production. November 2014 DocID026224 Rev 3 1/18 18 STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data Figure 1.Internal schematic diagram Features • 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 40 A • Tight parameters distribution • Safer paralleling • Low thermal resistance • Soft and fast recovery antiparallel diode Applications • Industrial drives • UPS • Solar • Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW40M120DF3 G40M120DF3 TO-247 Tube STGWA40M120DF3 G40M120DF3 TO-247 long leads Tube www.st.com |
Аналогичный номер детали - STGW40M120DF3 |
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Аналогичное описание - STGW40M120DF3 |
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