поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

STGW40V60DLF датащи(PDF) 4 Page - STMicroelectronics

номер детали STGW40V60DLF
подробное описание детали  Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Download  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW40V60DLF датащи(HTML) 4 Page - STMicroelectronics

  STGW40V60DLF Datasheet HTML 1Page - STMicroelectronics STGW40V60DLF Datasheet HTML 2Page - STMicroelectronics STGW40V60DLF Datasheet HTML 3Page - STMicroelectronics STGW40V60DLF Datasheet HTML 4Page - STMicroelectronics STGW40V60DLF Datasheet HTML 5Page - STMicroelectronics STGW40V60DLF Datasheet HTML 6Page - STMicroelectronics STGW40V60DLF Datasheet HTML 7Page - STMicroelectronics STGW40V60DLF Datasheet HTML 8Page - STMicroelectronics STGW40V60DLF Datasheet HTML 9Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 17 page
background image
Electrical characteristics
STGW40V60DLF, STGWT40V60DLF
4/17
DocID024212 Rev 4
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA
600
V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 40 A
1.8
2.3
V
V
GE
= 15 V, I
C
= 40 A
T
J
= 125 °C
2.15
V
GE
= 15 V, I
C
= 40 A
T
J
= 175 °C
2.35
V
F
Forward on-voltage
I
F
= 40 A
1.55
1.8
V
I
F
= 40 A T
J
= 125 °C
1.3
V
I
F
= 40 A T
J
= 175 °C
1.25
V
V
GE(th)
Gate threshold voltage
V
CE
= V
GE
, I
C
= 1 mA
5
6
7
V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V
25
μA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20 V
250
nA
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-5400
-
pF
C
oes
Output capacitance
-
220
-
pF
C
res
Reverse transfer
capacitance
-180
-
pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 40 A,
V
GE
= 15 V (see
Figure 27)
-226
-
nC
Q
ge
Gate-emitter charge
-
38
-
nC
Q
gc
Gate-collector charge
-
95
-
nC


Аналогичный номер детали - STGW40V60DLF

производительномер деталидатащиподробное описание детали
logo
STMicroelectronics
STGW40V60DF STMICROELECTRONICS-STGW40V60DF Datasheet
1Mb / 17P
   Trench gate field-stop IGBT, V series
STGW40V60DF STMICROELECTRONICS-STGW40V60DF Datasheet
1Mb / 21P
   Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
April 2014 Rev 8
More results

Аналогичное описание - STGW40V60DLF

производительномер деталидатащиподробное описание детали
logo
STMicroelectronics
STGB40V60F STMICROELECTRONICS-STGB40V60F Datasheet
1Mb / 24P
   Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
April 2014 Rev 2
STGFW40V60DF STMICROELECTRONICS-STGFW40V60DF Datasheet
1Mb / 21P
   Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
April 2014 Rev 8
STGFW20V60DF STMICROELECTRONICS-STGFW20V60DF Datasheet
709Kb / 15P
   Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
February 2017 Rev 2
STGW60V60DF STMICROELECTRONICS-STGW60V60DF Datasheet
1Mb / 16P
   Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
STGFW30V60F STMICROELECTRONICS-STGFW30V60F Datasheet
1Mb / 19P
   Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
April 2014 Rev 4
STGW60V60DF STMICROELECTRONICS-STGW60V60DF_V01 Datasheet
1Mb / 20P
   Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
September 2016
STGFW80V60F STMICROELECTRONICS-STGFW80V60F Datasheet
1Mb / 19P
   Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
May 2014 Rev 1
STGFW30V60DF STMICROELECTRONICS-STGFW30V60DF Datasheet
1Mb / 15P
   Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
March 2014 Rev 1
STGFW20V60F STMICROELECTRONICS-STGFW20V60F Datasheet
1Mb / 19P
   600 V, 20 A very high speed trench gate field-stop IGBT
July 2013 Rev 1
STGB20V60F STMICROELECTRONICS-STGB20V60F Datasheet
1Mb / 18P
   600 V, 20 A very high speed trench gate field-stop IGBT
July 2013 Rev 1
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com