STGIPQ3H60T-HL datasheet(11/26 Pages) STMICROELECTRONICS

номер детали	STGIPQ3H60T-HL

подробное описание детали	SLLIMM??nano - 2 nd series IPM, 3 A, 600 V, 3-phase IGBT inverter bridge

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STGIPQ3H60T-HL, STGIPQ3H60T-HZ

Electrical characteristics

DocID027219 Rev 5

11/26

Table 13: Sense comparator characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Iib

Input bias current

VCIN = 1 V

-

3.1

µA

Vod

Open-drain low level output

voltage

Iod = 3 mA

-

0.5

V

RON_OD

Open-drain low level output

Iod = 3 mA

-

166

Ω

RPD_SD

SD

pull-down resistor (1)

-

125

kΩ

td_comp

Comparator delay

T/ SD /OD pulled to 5 V

through 100 kΩ resistor

-

90

130

ns

SR

Slew rate

CL = 180 pF; Rpu

= 5 kΩ

-

60

V/µs

tsd

Shutdown to high / low-side

driver propagation delay

VOUT = 0, Vboot = VCC,

VIN = 0 to 3.3 V

-

125

ns

tisd

Comparator triggering to high /

low-side driver turn-off

propagation delay

Measured applying a

voltage step from 0 V to

3.3 V to pin CIN

-

200

Notes:

(1)Equivalent values as a result of the resistances of three drivers in parallel.

Table 14: Truth table

Conditions

Logic input (VI)

Output

T/ SD /OD

LIN

HIN

LVG

HVG

Shutdown enable half-bridge tri-state

L

X(1)

L

Interlocking half-bridge tri-state

H

L

0 “logic state” half-bridge tri-state

H

L

1 “logic state” low-side direct driving

H

L

H

L

1 “logic state” high-side direct driving

H

L

H

L

H

Notes:

(1)X: don’t care.

Аналогичный номер детали - STGIPQ3H60T-HL

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGIPQ3H60T-HLS	1Mb / 26P	SLLIMM-nano, 2nd series IPM, 3 A, 600 V, 3-phase inverter bridge IGBT September 2022 Rev 5

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Аналогичное описание - STGIPQ3H60T-HL

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