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STF42N65M5 датащи(PDF) 3 Page - STMicroelectronics

номер детали STF42N65M5
подробное описание детали  N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
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STx42N65M5
Electrical ratings
Doc ID 15317 Rev 3
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, TO-247
D²PAK, I²PAK
TO-220FP
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
33
33 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100 °C
20.8
20.8 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
132
132 (1)
A
PTOT
Total dissipation at TC = 25 °C
190
40
W
IAR
Max current during repetitive or single pulse
avalanche (pulse width limited by TJMAX)
11
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
950
mJ
dv/dt (3)
3.
ISD ≤ 33 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
--
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
D²PAK I²PAK TO-220 TO-247 TO-220FP
Rthj-case
Thermal resistance junction-
case max
0.66
3.1
°C/W
Rthj-amb
Thermal resistance junction-
ambient max
--
62.5
50
62.5
°C/W
Rthj-pcb
Thermal resistance junction-pcb
max
30
--
--
--
--
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C


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