поискавой системы для электроныых деталей |
|
FDS7066ASN3 датащи(PDF) 2 Page - Fairchild Semiconductor |
|
FDS7066ASN3 датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page FDS7066ASN3 Rev A (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C 26 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.5 3 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C –3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 19 A VGS = 4.5 V, ID = 17.5 A VGS = 10 V, ID = 19 A, TJ = 125°C 4 5 6 4.8 6.0 7.2 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 30 A gFS Forward Transconductance VDS = 10 V, ID = 19 A 76 S Dynamic Characteristics Ciss Input Capacitance 2460 pF Coss Output Capacitance 710 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 260 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.7 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 10 20 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 44 70 ns tf Turn–Off Fall Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 28 45 ns Qg(TOT) Total Gate Charge at Vgs=10V VDD = 15 V, ID = 19 A, VGS = 5 V 44 62 nC Qg Total Gate Charge at Vgs=5V 24 34 nC Qgs Gate–Source Charge 7 nC Qgd Gate–Drain Charge 8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Schottky Diode Forward Current 4.3 A VSD Drain–Source Schottky Diode Forward Voltage VGS = 0 V, IS = 4.3 A (Note 2) 0.5 0.7 V tRR Reverse Recovery Time 25 ns QRR Reverse Recovery Charge IF = 19 A diF/dt = 300 A/us 23 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 40°C/W when mounted on a 1in 2 pad of 2 oz copper b) 85°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
Аналогичный номер детали - FDS7066ASN3 |
|
Аналогичное описание - FDS7066ASN3 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |