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TMP100AQDBVRQ1 датащи(PDF) 4 Page - Texas Instruments

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номер детали TMP100AQDBVRQ1
подробное описание детали  Temperature Sensor With I2C and SMBus Interface with Alert Function in SOT-23 Package
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TMP100-Q1, TMP101-Q1
SBOS581A – SEPTEMBER 2011 – REVISED MAY 2017
www.ti.com
Product Folder Links: TMP100-Q1 TMP101-Q1
Submit Documentation Feedback
Copyright © 2011–2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Input voltage rating applies to all TMP100-Q1 and TMP101-Q1 input voltages.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Power supply, V+
7.5
V
Input voltage(2)
–0.5
7.5
V
Operating temperature
–55
125
°C
Junction temperature, TJ
150
°C
Storage temperature, Tstg
–60
150
°C
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002 (1)
±2000
V
Charged-device model (CDM), per AEC Q100-011
±750
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
Supply voltage
2.7
5.5
V
Operating free-air temperature, TA
–55
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC(1)
TMP100-Q1,
TMP101-Q1
UNIT
DBV (SOT-23)
6 PINS
RθJA
Junction-to-ambient thermal resistance
182.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
115
°C/W
RθJB
Junction-to-board thermal resistance
30.2
°C/W
ψJT
Junction-to-top characterization parameter
17.1
°C/W
ψJB
Junction-to-board characterization parameter
29.7
°C/W


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