поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

2SK3466 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали 2SK3466
подробное описание детали  TOSHIBA Field Effect Transistor
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3466 датащи(HTML) 2 Page - Toshiba Semiconductor

  2SK3466 Datasheet HTML 1Page - Toshiba Semiconductor 2SK3466 Datasheet HTML 2Page - Toshiba Semiconductor 2SK3466 Datasheet HTML 3Page - Toshiba Semiconductor 2SK3466 Datasheet HTML 4Page - Toshiba Semiconductor 2SK3466 Datasheet HTML 5Page - Toshiba Semiconductor 2SK3466 Datasheet HTML 6Page - Toshiba Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
2SK3466
2002-02-06
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
¾
¾
±10
mA
Drain cut-OFF current
IDSS
VDS = 500 V, VGS = 0 V
¾
¾
100
mA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
¾
¾
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
¾
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
¾
1.35
1.50
W
Forward transfer admittance
ïYfsï
VDS = 10 V, ID = 5 A
2.5
4.0
¾
S
Input capacitance
Ciss
¾
780
¾
Reverse transfer capacitance
Crss
¾
60
¾
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
¾
200
¾
pF
Rise time
tr
¾
12
¾
Turn-ON time
ton
¾
25
¾
Fall time
tf
¾
15
¾
Switching time
Turn-OFF time
toff
¾
60
¾
ns
Total gate charge
(gate-source plus gate-drain)
Qg
¾
17
¾
Gate-source charge
Qgs
¾
11
¾
Gate-drain (“miller”) charge
Qgd
VDD ~- 400 V, VGS = 10 V, ID = 5 A
¾
6
¾
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDSF
¾
¾
¾
5
A
Pulse drain reverse current
(Note 1)
IDRP
¾
¾
¾
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
¾
¾
-1.7
V
Reverse recovery time
trr
¾
1400
¾
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/ms
¾
9
¾
mC
Marking
Duty <= 1%, tw = 10 ms
0 V
10 V
VGS
RL = 90 W
VDD ~- 225 V
ID = 2.5 A
Output
15
W
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Type
K3466


Аналогичный номер детали - 2SK3466

производительномер деталидатащиподробное описание детали
logo
Toshiba Semiconductor
2SK3466 TOSHIBA-2SK3466 Datasheet
187Kb / 6P
   Silicon N Channel MOS Type Chopper Regulator Applications
2SK3466 TOSHIBA-2SK3466 Datasheet
182Kb / 6P
   Chopper Regulator Applications
2SK3466 TOSHIBA-2SK3466 Datasheet
1Mb / 73P
   Bipolar Small-Signal Transistors
2SK3466 TOSHIBA-2SK3466_06 Datasheet
187Kb / 6P
   Silicon N Channel MOS Type Chopper Regulator Applications
2SK3466 TOSHIBA-2SK3466_10 Datasheet
182Kb / 6P
   Chopper Regulator Applications
More results

Аналогичное описание - 2SK3466

производительномер деталидатащиподробное описание детали
logo
Toshiba Semiconductor
2SK2037 TOSHIBA-2SK2037 Datasheet
192Kb / 3P
   TOSHIBA FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE
HN1K04FU TOSHIBA-HN1K04FU Datasheet
124Kb / 5P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3J02F TOSHIBA-SSM3J02F Datasheet
164Kb / 5P
   TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3K17FU TOSHIBA-SSM3K17FU Datasheet
234Kb / 5P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N04FU TOSHIBA-SSM6N04FU Datasheet
175Kb / 5P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3320-GR TOSHIBA-2SK3320-GR Datasheet
312Kb / 5P
   TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
TK8A60DA TOSHIBA-TK8A60DA Datasheet
266Kb / 6P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3J35MFV TOSHIBA-SSM3J35MFV Datasheet
256Kb / 5P
   TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3K35CT TOSHIBA-SSM3K35CT Datasheet
215Kb / 5P
   TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K44FS TOSHIBA-SSM3K44FS Datasheet
171Kb / 5P
   TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
More results


Html Pages

1 2 3 4 5 6


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com