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FP-40EV датащи(PDF) 9 Page - Renesas Technology Corp |
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FP-40EV датащи(HTML) 9 Page - Renesas Technology Corp |
9 / 12 page R2A20104/114 Series R03DS0008EJ0301 Rev.3.01 Page 9 of 11 Jan 08, 2016 Electrical Characteristics (cont.) (Ta = 25°C, VCC = 12 V, CT = 1000 pF, RT = 27 k Ω, CS1, CS2 = GND, IRAMP = 10 kΩ, BO = 1 V, VAC = 0 V, RS = 220 k Ω, FMC = GND (*1), FM = GND (*2), FB = COMP) Item Symbol Min Typ Max Unit Test Conditions Synchroni- zation SYNC threshold voltage (rising) Vsync 2.0 2.5 3.0 V SYNC Min. pulse Psync 2 — — μs SYNC-OUT shunt current (*1) Isync-s 5.0 — — mA SYNC-OUT leakage current (*1) Isync-l — — 1.0 μA Current slope RS output voltage 1 Vrs1 0.56 0.65 0.74 V VAC = 0 V, VFB = 2.5 V RS output voltage 2 Vrs2 0.04 0.14 0.26 V VAC = 2.5 V, VFB = 0 V VAC bias current Ivac –0.4 –0.2 –0.05 μA Measured pin: VAC Soft start Source current Iss –40 –28 –16 μA SS = 2 V Phase drop Phase drop threshold voltage (*1) Vpd 2.4 2.5 2.6 V Phase drop hysteresis (*1) Hya-pd 150 200 250 mV PD bias current (*1) Ipd 0.05 0.2 0.5 μA Measured pin: PD AMP1, 2 CSO offset voltage1 (*5) Voffset 0.68 0.88 1.0 V Vcs = 0 V CSO offset voltage1 (*6) Voffset 0.54 0.74 0.86 V Vcs = 0 V CSO offset voltage2 Vcaoh 2.83 3 3.17 V Vcs = 0.24 V (*5), Vcs = 2.3 V (*6) CS Bias current (*5) Ics-r –0.4 –0.2 –0.05 μA Measured pin: CS1, 2 CS Bias current (*6) Ics-ct –1.1 –0.8 –0.5 μA Measured pin: CS1, 2 Gate drive 1, 2 Gate drive rise time tr-gd — 30 100 ns CL = 500 pF Gate drive fall time tf-gd — 30 100 ns CL = 500 pF Gate drive low voltage Vol1-gd — 0.05 0.2 V Isink = 10 mA Vol2-gd — 1 1.25 V Isink = 0.25 mA, VCC = 5 V Gate drive high voltage Voh-gd 11.5 11.9 — V Isource = –10 mA Minimum duty cycle Dmin-out — — 0 % Maximum duty cycle Dmax-out 90 95 98 % Over voltage protection Dynamic OVP Threshold voltage Vdovp VFB × 1.025 VFB × 1.040 VFB × 1.055 V Static OVP Threshold voltage Vsovp VFB × 1.065 VFB × 1.080 VFB × 1.095 V COMP = OPEN Static OVP Hysteresis Hys-sovp 30 80 130 mV COMP = OPEN OVP2 Threshold voltage (*1) Vovp2 VFB × 1.065 VFB × 1.080 VFB × 1.095 μA OVP2 Hysteresis (*1) Hys-ovp2 30 80 130 mV COMP = OPEN OVP2 Bias current (*1) Iovp2 –0.5 –0.3 –0.05 μA Measured pin: OVP2 FB Open Detect Threshold voltage Vfbopen 0.45 0.5 0.55 V FB Open Detect hysteresis Vfbopen 0.16 0.2 0.24 V Over current protection OCP Threshold voltage (*5) VCL 0.28 0.31 0.34 V OCP Threshold voltage (*6) VCL 2.9 3 3.1 V Delay to output td-CL — 100 250 ns Notes: *1 Applied to R2A20104FP, R2A20114FP *2 Applied to R2A20104SP, R2A20114SP *5 Applied to R2A20114FP, R2A20114SP *6 Applied to R2A20104FP, R2A20104SP |
Аналогичный номер детали - FP-40EV |
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Аналогичное описание - FP-40EV |
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