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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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S124 датащи(PDF) 86 Page - Renesas Technology Corp |
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S124 датащи(HTML) 86 Page - Renesas Technology Corp |
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86 / 98 page  R01DS0264EU0100 Rev.1.00 Page 86 of 95 Feb 23, 2016 S124 2. Electrical Characteristics Note 1. Does not include the time until each operation of the flash memory is started after instructions are executed by the software. Note 2. The lower-limit frequency of ICLK is 1 MHz during programming or erasing the flash memory. When using ICLK at below 4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set. Note 3. The frequency accuracy of ICLK must be ±3.5% while programming or erasing the flash memory. Confirm the frequency accuracy of the clock source. 2.12.2 Data Flash Memory Characteristics Note 1. The reprogram/erase cycle is the number of erasure for each block. When the reprogram/erase cycle is n times (n = 100,000), erasing can be performed n times for each block. For instance, when 1-byte programming is performed 1,000 times for different addresses in 1-byte blocks, and then the entire block is erased, the reprogram/erase cycle is counted as one. However, programming the same address for several times as one erasure is not enabled. (overwriting is prohibited.) Note 2. Characteristics when using the flash memory programmer and the self-programming library provided by Renesas Electronics. Note 3. These results are obtained from reliability testing. Table 2.58 Code flash characteristics (3) Middle-speed operating mode Conditions: VCC = AVCC0 = 1.8 to 5.5 V, Ta = -40 to +85°C Item Symbol ICLK = 1 MHz ICLK = 8 MHz Unit Min Typ Max Min Typ Max Programming time 4-byte tP4 - 157 1411 - 101 966 μs Erasure time 1-KB tE1K - 9.10 289 - 6.10 228 ms Blank check time 2-byte tBC4 -- 87.7 -- 52.5 μs 1-KB tBC1K -- 1930 -- 414 μs Erase suspended time tSED -- 32.7 -- 21.6 μs Startup area switching setting time tSAS - 22.8 592 - 14.2 465 ms Access window time tAWS - 22.8 592 - 14.2 465 ms OCD/serial programmer ID setting time tOSIS - 22.8 592 - 14.2 465 ms Flash memory mode transition wait time 1 tDIS 2 -- 2 -- μs Flash memory mode transition wait time 2 tMS 720 -- 720 -- ns Table 2.59 Data flash characteristics (1) Item Symbol Min Typ Max Unit Conditions Reprogramming/erasure cycle*1 NDPEC 100000 1000000 - Times - Data hold time After 10000 times of NDPEC tDDRP 20*2, *3 -- Year Ta = +85°C After 100000 times of NDPEC 5*2, *3 -- Year After 1000000 times of NDPEC -1*2, *3 - Year Ta = +25°C |
Аналогичный номер детали - S124 |
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Аналогичное описание - S124 |
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