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UPA2736GR датащи(PDF) 4 Page - Renesas Technology Corp

номер детали UPA2736GR
подробное описание детали  P-channel MOSFET
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPA2736GR датащи(HTML) 4 Page - Renesas Technology Corp

  UPA2736GR_16 Datasheet HTML 1Page - Renesas Technology Corp UPA2736GR_16 Datasheet HTML 2Page - Renesas Technology Corp UPA2736GR_16 Datasheet HTML 3Page - Renesas Technology Corp UPA2736GR_16 Datasheet HTML 4Page - Renesas Technology Corp UPA2736GR_16 Datasheet HTML 5Page - Renesas Technology Corp UPA2736GR_16 Datasheet HTML 6Page - Renesas Technology Corp UPA2736GR_16 Datasheet HTML 7Page - Renesas Technology Corp  
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μPA2736GR
R07DS1320EJ0100 Rev.1.00
Page 4 of 6
Jan 25, 2016
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
-0
-1
-2
-3
-50
0
50
100
150
Pulsed
VDS = –10 V
ID = –1 mA
Tch - Channel Temperature - °C
0.1
1
10
100
-0.01
-0.1
-1
-10
Pulsed
VDS = –10 V
TA = 150°C
75
°C
25
°C
–55
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
4
8
12
16
20
-1
-10
-100
-1000
Pulsed
–10 V
VGS = –4.5
ID - Drain Current - A
0
5
10
15
20
25
30
-0
-5
-10
-15
-20
Pulsed
ID = –14 A
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
5
10
15
-50
0
50
100
150
Pulsed
ID = –14 A
VGS = –4.5 V
VGS = –10 V
Tch - Channel Temperature - °C
100
1000
10000
-0.1
-1
-10
-100
VGS = 0 V
f = 1 MHz
Crss
Ciss
Coss
VDS - Drain to Source Voltage - V


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