UPD48288209AF1 datasheet(45/54 Pages) RENESAS

номер детали	UPD48288209AF1

подробное описание детали	288M-BIT Low Latency DRAM

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µµµµPD48288209AF1, µµµµPD48288218AF1, µµµµPD48288236AF1

R10DS0254EJ0101 Rev. 1.01

Page 45 of 53

Jan. 15, 2016

Table 3-3. JTAG AC Characteristics (0°C

≤≤≤≤ TC ≤≤≤≤ 95°C)

Parameter

Symbol

Conditions

MIN.

MAX.

Unit

Note

Clock

Clock cycle time

tTHTH

20

ns

Clock frequency

fTF

50

MHz

Clock HIGH time

tTHTL

10

ns

Clock LOW time

tTLTH

10

ns

Output time

TCK LOW to TDO unknown

tTLOX

0

ns

TCK LOW to TDO valid

tTLOV

10

ns

Setup time

TMS setup time

tMVTH

5

ns

TDI valid to TCK HIGH

tDVTH

5

ns

Capture setup time

tCSJ

5

ns

1

Hold time

TMS hold time

tTHMX

5

ns

TCK HIGH to TDI invalid

tTHDX

5

ns

Capture hold time

tCHJ

5

ns

1

Note

tCSJ and tCHJ refer to the setup and hold time requirements of latching data from the boundary scan register.

JTAG Timing Diagram

tTHTH

tTLOV

tTLTH

tTHTL

tMVTH

tTHDX

tDVTH

tTHMX

TCK

TMS

TDI

TDO

tTLOX

Аналогичный номер детали - UPD48288209AF1

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	UPD48288209AFF-E18-DW1	1Mb / 53P	288M-BIT Low Laten cy DRAM Common I/O Oct 01, 2012
	UPD48288209AFF-E18-DW1-A	1Mb / 53P	288M-BIT Low Laten cy DRAM Common I/O Oct 01, 2012
	UPD48288209AFF-E24-DW1	1Mb / 53P	288M-BIT Low Laten cy DRAM Common I/O Oct 01, 2012
	UPD48288209AFF-E24-DW1-A	1Mb / 53P	288M-BIT Low Laten cy DRAM Common I/O Oct 01, 2012
	UPD48288209AFF-E25-DW1	1Mb / 53P	288M-BIT Low Laten cy DRAM Common I/O Oct 01, 2012

More results

Аналогичное описание - UPD48288209AF1

производитель	номер детали	датащи	подробное описание детали
Renesas Technology Corp	UPD48288118AF1	1Mb / 52P	288M-BIT Low Latency DRAM
	UPD48288209-A	862Kb / 50P	288M-BIT Low Latency DRAM Common I/O Feb 01, 2013
	UPD48288118-A	843Kb / 48P	288M-BIT Low Latency DRAM Separate I/O Feb 01, 2013
	UPD48576118F1	1Mb / 52P	576M-BIT Low Latency DRAM
	UPD48576209F1	1Mb / 54P	576M-BIT Low Latency DRAM
	UPD48288209A	1Mb / 53P	288M-BIT Low Laten cy DRAM Common I/O Oct 01, 2012
	UPD48288109A	1Mb / 52P	288M-BIT Low Laten cy DRAM Separate I/O Oct 01, 2012
	UPD48576209	1Mb / 53P	576M-BIT Low Latency DRAM Common I/O Oct 01, 2012
	UPD48576109	1Mb / 52P	576M-BIT Low Latency DRAM Separate I/O Oct 01, 2012
Elpida Memory	EDR2518ABSE	1Mb / 79P	288M bits Direct Rambus DRAM

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Аналогичный номер детали - UPD48288209AF1

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