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UPD48288209AF1 датащи(PDF) 17 Page - Renesas Technology Corp

номер детали UPD48288209AF1
подробное описание детали  288M-BIT Low Latency DRAM
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD48288209AF1 датащи(HTML) 17 Page - Renesas Technology Corp

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µµµµPD48288209AF1, µµµµPD48288218AF1, µµµµPD48288236AF1
R10DS0254EJ0101 Rev. 1.01
Page 17 of 53
Jan. 15, 2016
2.
Operation
2.1
Command Operation
According to the functional signal description, the following command sequences are possible. All input states or sequences not shown
are illegal or reserved. All command and address inputs must meet setup and hold times around the rising edge of CK.
Table 2-1. Address Widths at Different Burst Lengths
Burst Length
Configuration
x9
x18
x36
BL=2
A0–A20
A0–A19
A0–A18
BL=4
A0–A19
A0–A18
A0–A17
BL=8
A0–A18
A0–A17
N/A
Table 2-2. Command Table
Operation
Code
CS#
WE#
REF#
A0–AnNote1
BA0–BA2
Note
Device DESELECT / No Operation
DESEL / NOP
H
X
X
X
X
MRS: Mode Register Set
MRS
L
L
L
OPCODE
X
2
READ
READ
L
H
H
A
BA
3
WRITE
WRITE
L
L
H
A
BA
3
AUTO REFRESH
AREF
L
H
L
X
BA
Notes
1. n = 20.
2. Only A0–A17 are used for the MRS command.
3. See Table 2-1.
Remark X = “Don’t Care”, H = logic HIGH, L = logic LOW, A = valid address, BA = valid bank address
2.2
Description of Commands
DESEL / NOP Note1
The NOP command is used to perform a no operation to the
µPD48288209/18/36AF1, which essentially deselects the chip. Use the
NOP command to prevent unwanted commands from being registered during idle or wait states. Operations already in progress are not
affected. Output values depend on command history.
MRS
The mode register is set via the address inputs A0–A17. See Figure 2-5. Mode Register Bit Map for further information. The
MRS command can only be issued when all banks are idle and no bursts are in progress.
READ
The READ command is used to initiate a burst read access to a bank. The value on the BA0–BA2 inputs selects the bank, and the
address provided on inputs A0–A20 selects the data location within the bank.
WRITE
The WRITE command is used to initiate a burst write access to a bank. The value on the BA0–BA2 inputs selects the bank, and the
address provided on inputs A0–A20 selects the data location within the bank. Input data appearing on the DQ is written to the memory
array subject to the DM input logic level appearing coincident with the data. If the DM signal is registered LOW, the corresponding
data will be written to memory. If the DM signal is registered HIGH, the corresponding data inputs will be ignored (i.e., this part of
the data word will not be written).


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