SI4804DY datasheet(1/1 Pages) VISHAY

номер детали	SI4804DY

подробное описание детали	Dual N-Channel, 30-V (D-S) MOSFET Specification Comparison

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Specification Comparison

Vishay Siliconix

Document Number: 72893

22-Mar-04

www.vishay.com

1

Si4804BDY vs. Si4804DY

Description: Dual N-Channel, 30-V (D-S) MOSFET

Package:

SOIC-8

Pin Out:

Identical

Part Number Replacements:

Si4804BDY Replaces Si4804DY

Si4804BDY—E3 (Lead Free version) Replaces Si4804DY

Si4804BDY-T1 Replaces Si4804DY-T1

Si4804BDY-T1—E3 (Lead Free version) Replaces Si4804DY-T1

Summary of Performance:

The Si4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric

tables below.

ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Si4804BDY

Si4804DY

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current

TA = 25_C

ID

7.5

Continuous Drain Current

TA = 70_C

ID

6

A

Pulsed Drain Current

IDM

30

20

A

Continuous Source Current (MOSFET Diode Conduction)

IS

2.3

1.7

Power Dissipation

TA = 25_C

PD

1.7

2.0

W

Power Dissipation

TA = 70_C

PD

2.0

1.3

W

Operating Junction and Storage Temperature Range

Tj and Tstg

−55 to 150

_C

Maximum Junction-to-Ambient

RthJA

62.5

_C/W

SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)

Si4804BDY

Si4804DY

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Static

Gate-Threshold Voltage

VG(th)

0.8

3.0

0.8

V

Gate-Body Leakage

IGSS

"100

nA

Zero Gate Voltage Drain Current

IDSS

1

mA

On-State Drain Current

VGS = 10 V

ID(on)

20

A

Drain Source On Resistance

VGS = 10 V

rD( )

0.017

0.022

0.018

0.022

W

Drain-Source On-Resistance

VGS = 4.5 V

rDs(on)

0.024

0.030

0.024

0.030

W

Forward Transconductance

gfs

19

22

S

Diode Forward Voltage

VSD

0.75

1.2

0.8

1.2

V

Dynamic

Total Gate Charge

Qg

7

11

13

20

Gate-Source Charge

Qgs

2.9

2

nC

Gate-Drain Charge

Qgd

2.5

2.7

Gate Resistance

Rg

0.5

1.5

2.6

NS

W

Switching

Turn-On Time

td(on)

9

15

8

16

Turn-On Time

tr

10

17

10

20

Turn Off Time

td(off)

19

30

21

40

ns

Turn-Off Time

tf

9

15

10

20

Source-Drain Reverse Recovery Time

trr

35

55

40

80

NS denotes parameter not specified in original data sheet.

Аналогичный номер детали - SI4804DY

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI4804DY	62Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. D, 13-Oct-03
Vishay Siliconix	SI4804DY-T1	62Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. D, 13-Oct-03
VBsemi Electronics Co.,...	SI4804DY-T1-GE3	1Mb / 9P	Dual N-Channel 30 V (D-S) MOSFET

More results

Аналогичное описание - SI4804DY

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
Vishay Siliconix	SIZ340DT	372Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. B, 24-Mar-14
Analog Power	AM6926NH	398Kb / 5P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4276DY-T1-E3	232Kb / 14P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 11-Apr-11
	SI4276DY	304Kb / 15P	Dual N-Channel 30 V (D-S) MOSFET Rev. A, 31-May-10
	SI5906DU	164Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 20-Jul-09
	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET

More results

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