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BC557 датащит (Datasheet) 1 Page - Fairchild Semiconductor

№ деталь BC557
подробность  Switching and Amplifier
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
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©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a=25°C unless otherwise noted
Electrical Characteristics T
a=25°C unless otherwise noted
hFE Classification
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: BC556
: BC557/560
: BC558/559
-80
-50
-30
V
V
V
VCEO
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
-65
-45
-30
V
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-100
mA
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
ICBO
Collector Cut-off Current
VCB= -30V, IE=0
-15
nA
hFE
DC Current Gain
VCE= -5V, IC=2mA
110
800
VCE
(sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-90
-250
-300
-650
mV
mV
VBE (sat)
Collector-Base Saturation Voltage
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-700
-900
mV
mV
VBE (on)
Base-Emitter On Voltage
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
-600
-660
-750
-800
mV
mV
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA, f=10MHz
150
MHz
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
6
pF
NF
Noise Figure
: BC556/557/558
: BC559/560
: BC559
: BC560
VCE= -5V, IC= -200µA
f=1KHz, RG=2KΩ
VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000MHz
2
1
1.2
1.2
10
4
4
2
dB
dB
dB
dB
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, VCEO= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
1. Collector 2. Base 3. Emitter
TO-92
1




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