BD135_17 datasheet(1/2 Pages) ISC

номер детали	BD135

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

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1

isc Silicon NPN Power Transistor

BD135

DESCRIPTION

·

DC Current Gain-

: hFE= 40(Min)@ IC= 0.15A

·

Collector-Emitter Sustaining Voltage -

: VCEO(SUS)= 45V(Min)

·

Complement to type BD136

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use as audio amplifiers and drivers utilizing

complementary or quasi complementary circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

45

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1.5

A

IB

Base Current-Continuous

0.5

A

PC

Collector Power Dissipation

@ Ta=25℃

1.25

W

Collector Power Dissipation

@ TC=25℃

12.5

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

10

℃

/W

Rth j-a

Thermal Resistance,Junction to Ambient

100

℃

/W

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