поискавой системы для электроныых деталей |
|
BD135 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
BD135 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor BD135 DESCRIPTION · DC Current Gain- : hFE= 40(Min)@ IC= 0.15A · Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 45V(Min) · Complement to type BD136 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ Ta=25℃ 1.25 W Collector Power Dissipation @ TC=25℃ 12.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃ /W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃ /W |
Аналогичный номер детали - BD135_17 |
|
Аналогичное описание - BD135_17 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |