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SD1008 датащи(PDF) 2 Page - Sirectifier Semiconductors |
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SD1008 датащи(HTML) 2 Page - Sirectifier Semiconductors |
2 / 2 page SD10 Discrete Diodes 0.001 0.01 0.1 1 0 50 100 150 200 250 2 3 4 5 6 7 8 9 1 10 102 103 0.0 0.4 0.8 1.2 1.6 0 10 20 30 40 50 0 10 20 30 0 20 40 60 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I2t I FSM I F A V F t s t ms P tot W I d(AV)M A Tamb t s K/W A2s 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 I F(AV)M T C A V A °C °C TVJ = 45°C 50Hz, 80% V RRM VR = 0 V Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180 ° Fig. 5 Max. forward current versus case temperature Fig. 6 Transient thermal impedance junction to case RthHA : 1 K/W 2 K/W 3 K/W 5 K/W 7 K/W 10 K/W 15 K/W TVJ = 150°C TVJ=150°C TVJ= 25°C TVJ = 150°C ZthJC TVJ = 45°C Constants for ZthJC calculation: i R thi (K/W) t i (s) 1 0.01362 0.0001 2 0.1962 0.00316 3 0.267 0.023 4 0.3052 0.4 5 0.218 0.15 0.001 0.01 0.1 1 0 50 100 150 200 250 2 3 4 5 6 7 8 9 1 10 102 103 0.0 0.4 0.8 1.2 1.6 0 10 20 30 40 50 0 10 20 30 0 20 40 60 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I 2t I FSM I F A V F t s t ms P tot W I d(AV)M A T amb t s K/W A 2s 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 I F(AV)M T C A V A °C °C T VJ = 45°C 50Hz, 80% V RRM V R = 0 V Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180 ° Fig. 5 Max. forward current versus case temperature Fig. 6 Transient thermal impedance junction to case R thHA : 1 K/W 2 K/W 3 K/W 5 K/W 7 K/W 10 K/W 15 K/W T VJ = 150°C T VJ=150°C T VJ= 25°C T VJ = 150°C Z thJC T VJ = 45°C Constants for Z thJC calculation: i R thi (K/W) t i (s) 1 0.01362 0.0001 2 0.1962 0.00316 3 0.267 0.023 4 0.3052 0.4 5 0.218 0.15 0.001 0.01 0.1 1 0 50 100 150 200 250 2 3 4 5 6 7 8 9 1 10 102 103 0.0 0.4 0.8 1.2 1.6 0 10 20 30 40 50 0 10 20 30 0 20 40 60 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 I 2t I FSM I F A V F t s t ms P tot W I d(AV)M A T amb t s K/W A 2s 0 20 40 60 80 100 120 140 0 5 10 15 20 25 30 35 I F(AV)M T C A V A °C °C T VJ = 45°C 50Hz, 80% V RRM V R = 0 V Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180 ° Fig. 5 Max. forward current versus case temperature Fig. 6 Transient thermal impedance junction to case R thHA : 1 K/W 2 K/W 3 K/W 5 K/W 7 K/W 10 K/W 15 K/W T VJ = 150°C T VJ=150°C T VJ= 25°C T VJ = 150°C Z thJC T VJ = 45°C Constants for Z thJC calculation: i R thi (K/W) t i (s) 1 0.01362 0.0001 2 0.1962 0.00316 3 0.267 0.023 4 0.3052 0.4 5 0.218 0.15 P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
Аналогичный номер детали - SD1008 |
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Аналогичное описание - SD1008 |
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