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FDS6900S датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS6900S датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page January 2003 2003 Fairchild Semiconductor Corporation FDS6900S Rev C(W) FDS6900S Dual N-Ch PowerTrench SyncFet™ General Description The FDS6900S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900S contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode 8.2A, 30V R DS(on) = 22mΩ @ VGS = 10V R DS(on) = 29mΩ @ VGS = 4.5V • Q1: Optimized for low switching losses Low Gate Charge ( 8 nC typical) 6.9A, 30V R DS(on) = 30mΩ @ VGS = 10V R DS(on) = 37mΩ @ VGS = 4.5V 8 1 7 2 6 3 5 4 Dual N-Channel SyncFet Q1 Q2 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Q2 Q1 Units VDSS Drain-Source Voltage 30 30 V VGSS Gate-Source Voltage ±20 ±20 V ID Drain Current - Continuous (Note 1a) 8.2 6.9 A - Pulsed 30 20 PD Power Dissipation for Dual Operation 2 W Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6900S FDS6900S 13” 12mm 2500 units S D S S SO- D D D G G1 S1D2 S1D2 S1D2 D1 D1 G2 S2 Pin 1 SO-8 |
Аналогичный номер детали - FDS6900S |
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Аналогичное описание - FDS6900S |
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