поискавой системы для электроныых деталей |
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TC55NEM208AFPN55 датащи(PDF) 6 Page - Toshiba Semiconductor |
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TC55NEM208AFPN55 датащи(HTML) 6 Page - Toshiba Semiconductor |
6 / 10 page TC55NEM208AFPN/AFTN55,70 2002-09-18 6/10 WRITE CYCLE 2 ( CONTROLLED) (See Note 4) Note: (1) R/W remains HIGH for the read cycle. (2) If CE goes LOW coincident with or after R/W goes LOW, the outputs will remain at high impedance. (3) If CE goes HIGH coincident with or before R/W goes HIGH, the outputs will remain at high impedance. (4) If OE is HIGH during the write cycle, the outputs will remain at high impedance. (5) Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied. CE R/W tWC tAS tWR tWP CE tCW VALID DATA IN tODW tDS tDH tCOE Hi-Z Hi-Z (See Note 5) (See Note 5) Address A0~A18 DOUT I/O1~8 DIN I/O1~8 |
Аналогичный номер детали - TC55NEM208AFPN55 |
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Аналогичное описание - TC55NEM208AFPN55 |
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