©2002 Fairchild Semiconductor Corporation

IRFD120 Rev. B

IRFD120

1.3A, 100V, 0.300 Ohm, N-Channel

Power MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

N-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching convertors, motor drivers, relay drivers,

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. They can be

operated directly from integrated circuits.

Formerly developmental type TA17401.

Features

• 1.3A, 100V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

HEXDIP

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD120

HEXDIP

IRFD120

NOTE: When ordering, use the entire part number.

G

D

S

SOURCE

GATE

DRAIN

Data Sheet

January 2002