BCP3669 datasheet(1/2 Pages) SECOS

номер детали	BCP3669

подробное описание детали	2 A , 80 V NPN Plastic-Encapsulate Transistor

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производитель	SECOS [SeCoS Halbleitertechnologie GmbH]

домашняя страница	http://www.secosgmbh.com

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Elektronische Bauelemente

BCP3669

2 A , 80 V

NPN Plastic-Encapsulate Transistor

27-Oct-2014 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

E

C

D

B

K

H

F

G

L

J

1

2

3

4

1

Base

3

Emitter

Collector

2

3669

oHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

Small Flat Package.

Large Current Capacity.

High DC Current Gain

APPLICATION

LF Amplifiers, Various Drivers, Muting Circuit

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-89

1K

7 inch

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

VCBO

80

V

Collector to Emitter Voltage

VCEO

80

V

Emitter to Base Voltage

VEBO

5

V

Continuous Collector Current

IC

2

A

Total Power Dissipation

PD

1

W

Junction, Storage Temperature

TJ, TSTG

150, -55~150

°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Test condition

Collector to Base Breakdown Voltage

V(BR)CBO

80

-

V

IC=100µA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

80

-

V

IC=100µA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=100µA, IC=0

Collector Cut-Off Current

ICBO

-

1

µA

VCB=80V, IE=0

Emitter Cut-Off Current

IEBO

-

1

µA

VBE=5V, IC=0

Collector-emitter saturation voltage

1

VCE(sat)

-

0.5

V

IC=1A, IB=50mA

Base-emitter saturation voltage

1

VBE(sat)

-

1.2

V

IC=1A, IB=50mA

180

-

240

VCE=2V, IC=500mA

DC Current Gain

1

hFE

40

-

VCE=2V, IC=1.5A

Transition Frequency

fT

-

100

-

MHz

VCE=2V, IC=500mA

Collector Output Capacitance

Cob

-

30

-

pF

VCB=10V, f=1MHz

Turn on

TON

-

0.2

-

Storage time

TSTG

-

1

-

Fall time

Tf

-

0.2

-

µS

VCC=30V, RL=30 ,

IC=1A,

IB1= -IB1=50mA

Duty Cycle≦1%

Note:

1.

Pulse Test: Pulse Width≦380µs, Duty Cycle≦2%

SOT-89

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.60

G

0.40

0.58

B

3.94

4.25

H

1.50

TYP

C

1.40

1.60

J

3.00

TYP

D

2.30

2.60

K

0.32

0.52

E

1.50

1.70

L

0.35

0.44

F

0.89

1.20

Date Code

Аналогичный номер детали - BCP3669

производитель	номер детали	датащи	подробное описание детали
SeCoS Halbleitertechnol...	BCP3669	222Kb / 2P	NPN Plastic-Encapsulate Transistor
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SeCoS Halbleitertechnol...	2SC3650	269Kb / 2P	1.2 A , 30 V NPN Plastic-Encapsulate Transistor
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