Si5513DC

Vishay Siliconix

Document Number: 71186

S-42138—Rev. F, 15-Nov-04

www.vishay.com

1

Complementary 20-V (D-S) MOSFET

PRODUCT SUMMARY

N Channel

20

4.2

4

N-Channel

20

3.1

4

P Channel

20

−2.9

3

P-Channel

−20

−2.2

3

Bottom View

1206-8 ChipFET

r

1

Marking Code

EB XX

Lot Traceability

and Date Code

Part # Code

Ordering Information:

Si5513DC-T1

Si5513DC-T1—E3 (Lead (Pb)-Free)

P-Channel MOSFET

N-Channel MOSFET

N-Channel

P-Channel

Parameter

Symbol

5 secs

Steady State

5 secs

Steady State

Unit

Drain-Source Voltage

20

−20

V

Gate-Source Voltage

"12

V

4.2

3.1

−2.9

−2.1

3.0

2.2

−2.1

−1.5

A

Pulsed Drain Current

10

−10

A

1.8

0.9

−1.8

−0.9

2.1

1.1

2.1

1.1

W

1.1

0.6

1.1

0.6

W

Operating Junction and Storage Temperature Range

−55 to 150

_C

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t v 5 sec

R

50

60

Steady State

90

110

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

30

40

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.