поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

TLC372I датащи(PDF) 8 Page - Texas Instruments

номер детали TLC372I
подробное описание детали  LIN CMOS DUAL DIFFERENTIAL COMPARATORS
Download  20 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  TI [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI - Texas Instruments

TLC372I датащи(HTML) 8 Page - Texas Instruments

Back Button TLC372I Datasheet HTML 4Page - Texas Instruments TLC372I Datasheet HTML 5Page - Texas Instruments TLC372I Datasheet HTML 6Page - Texas Instruments TLC372I Datasheet HTML 7Page - Texas Instruments TLC372I Datasheet HTML 8Page - Texas Instruments TLC372I Datasheet HTML 9Page - Texas Instruments TLC372I Datasheet HTML 10Page - Texas Instruments TLC372I Datasheet HTML 11Page - Texas Instruments TLC372I Datasheet HTML 12Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 8 / 20 page
background image
TLC372
LinCMOS DUAL DIFFERENTIAL COMPARATORS
SLCS114D − NOVEMBER 1983 − REVISED APRIL 2004
8
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
PRINCIPLES OF OPERATION
LinCMOS
process
The LinCMOS
 process is a Linear polysilicon-gate complementary-MOS process. Primarily designed for
single-supply applications, LinCMOS
 products facilitate the design of a wide range of high-performance
analog functions, from operational amplifiers to complex mixed-mode converters.
While digital designers are experienced with CMOS, MOS technologies are relatively new for analog designers.
This short guide is intended to answer the most frequently asked questions related to the quality and reliability
of LinCMOS
 products. Further questions should be directed to the nearest Texas Instruments field sales office.
electrostatic discharge
CMOS circuits are prone to gate oxide breakdown when exposed to high voltages even if the exposure is only
for very short periods of time. Electrostatic discharge (ESD) is one of the most common causes of damage to
CMOS devices. It can occur when a device is handled without proper consideration for environmental
electrostatic charges, e.g. during board assembly. If a circuit in which one amplifier from a dual operational
amplifier is being used and the unused pins are left open, high voltages tends to develop. If there is no provision
for ESD protection, these voltages may eventually punch through the gate oxide and cause the device to fail.
To prevent voltage buildup, each pin is protected by internal circuitry.
Standard ESD-protection circuits safely shunt the ESD current by providing a mechanism whereby one or more
transistors break down at voltages higher than the normal operating voltages but lower than the breakdown
voltage of the input gate. This type of protection scheme is limited by leakage currents which flow through the
shunting transistors during normal operation after an ESD voltage has occurred. Although these currents are
small, on the order of tens of nanoamps, CMOS amplifiers are often specified to draw input currents as low as
tens of picoamps.
To overcome this limitation, Texas Instruments design engineers developed the patented ESD-protection circuit
shown in Figure 4. This circuit can withstand several successive 1-kV ESD pulses, while reducing or eliminating
leakage currents that may be drawn through the input pins. A more detailed discussion of the operation of Texas
Instruments’s ESD- protection circuit is presented on the next page.
All input and output pins on LinCMOS and Advanced LinCMOS
 products have associated ESD-protection
circuitry that undergoes qualification testing to withstand 1000 V discharged from a 100-pF capacitor through
a 1500-
Ω resistor (human body model) and 200 V from a 100-pF capacitor with no current-limiting resistor
(charged device model). These tests simulate both operator and machine handling of devices during normal
test and assembly operations.
D3
R2
Q2
To Protected Circuit
VDD
D2
D1
Q1
R1
Input
VSS
Figure 4. LinCMOS
 ESD-Protection Schematic
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.


Аналогичный номер детали - TLC372I

производительномер деталидатащиподробное описание детали
logo
Texas Instruments
TLC372ID TI-TLC372ID Datasheet
183Kb / 12P
[Old version datasheet]   LinCMOSE DUAL DIFFERENTIAL COMPARATORS
TLC372ID TI1-TLC372ID Datasheet
1Mb / 26P
[Old version datasheet]   Single or Dual-Supply Operation
TLC372ID TI1-TLC372ID Datasheet
1Mb / 28P
[Old version datasheet]   LinCMOSE DUAL DIFFERENTIAL COMPARATORS
TLC372ID TI-TLC372ID Datasheet
1Mb / 29P
[Old version datasheet]   LinCMOS DUAL DIFFERENTIAL COMPARATORS
TLC372IDG4 TI1-TLC372IDG4 Datasheet
1Mb / 28P
[Old version datasheet]   LinCMOSE DUAL DIFFERENTIAL COMPARATORS
More results

Аналогичное описание - TLC372I

производительномер деталидатащиподробное описание детали
logo
Texas Instruments
LM193-MIL TI1-LM193-MIL Datasheet
329Kb / 16P
[Old version datasheet]   Dual Differential Comparators
logo
Tiger Electronic Co.,Lt...
LM2903D TGS-LM2903D Datasheet
203Kb / 4P
   Dual Differential Comparators
logo
Texas Instruments
LM2903-Q1 TI1-LM2903-Q1 Datasheet
212Kb / 9P
[Old version datasheet]   DUAL DIFFERENTIAL COMPARATORS
LM193 TI1-LM193_16 Datasheet
887Kb / 25P
[Old version datasheet]   Dual Differential Comparators
logo
Shenzhen Huazhimei Semi...
LM393 HMSEMI-LM393 Datasheet
285Kb / 4P
   Dual Differential Comparators
logo
Texas Instruments
TL393CD TI-TL393CD Datasheet
264Kb / 11P
[Old version datasheet]   DUAL DIFFERENTIAL COMPARATORS
LM193DRG4 TI-LM193DRG4 Datasheet
1Mb / 30P
[Old version datasheet]   DUAL DIFFERENTIAL COMPARATORS
NCV2903VDR2G TI-NCV2903VDR2G Datasheet
1Mb / 30P
[Old version datasheet]   DUAL DIFFERENTIAL COMPARATORS
TLV1393 TI-TLV1393 Datasheet
254Kb / 16P
[Old version datasheet]   DUAL DIFFERENTIAL COMPARATORS
LM193 TI-LM193 Datasheet
413Kb / 18P
[Old version datasheet]   DUAL DIFFERENTIAL COMPARATORS
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com