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TSHG620 датащи(PDF) 1 Page - Vishay Siliconix

номер детали TSHG620
подробное описание детали  High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSHG620 датащи(HTML) 1 Page - Vishay Siliconix

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TSHG6200
Document Number 81078
Rev. 1.3, 08-Mar-05
Vishay Semiconductors
www.vishay.com
1
94 8390
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double
Hetero
Description
TSHG6200 is a high speed infrared emitting diode in
GaAlAs double hetero (DH) technology, molded in a
clear, untinted plastic package.
The new technology combines high speed with high
radiant power at wavelength of 850 nm.
Features
• High modulation bandwidth
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard package T-1¾ (
∅ 5 mm)
• Angle of half intensity
ϕ = ± 10°
• Peak wavelength
λ
p = 850 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared radiation source for CMOS cameras
(illumination). High speed IR data transmission.
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Part
Remarks
TSHG6200
MOQ: 4000 pc
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
VR
5V
Forward current
IF
100
mA
Peak Forward Current
tp/T = 0.5, tp = 100 µsIFM
200
mA
Surge Forward Current
tp = 100 µsIFSM
1A
Power Dissipation
PV
250
mW
Junction Temperature
Tj
100
°C
Operating Temperature Range
Tamb
- 40 to + 85
°C
Storage Temperature Range
Tstg
- 40 to + 100
°C
Soldering Temperature
t
≤ 5 sec, 2 mm from case
Tsd
260
°C
Thermal Resistance Junction/
Ambient
RthJA
300
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward Voltage
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
IF = 1 A, tp = 100 µsVF
2.3
V
Temp. Coefficient of VF
IF = 100 mA
TKVF
-2.1
mV/K


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