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TSHG620 датащи(PDF) 1 Page - Vishay Siliconix |
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TSHG620 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 5 page TSHG6200 Document Number 81078 Rev. 1.3, 08-Mar-05 Vishay Semiconductors www.vishay.com 1 94 8390 High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines high speed with high radiant power at wavelength of 850 nm. Features • High modulation bandwidth • Extra high radiant power and radiant intensity • Low forward voltage • Suitable for high pulse current operation • Standard package T-1¾ ( ∅ 5 mm) • Angle of half intensity ϕ = ± 10° • Peak wavelength λ p = 850 nm • High reliability • Good spectral matching to Si photodetectors • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Infrared radiation source for CMOS cameras (illumination). High speed IR data transmission. Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Basic Characteristics Tamb = 25 °C, unless otherwise specified Part Remarks TSHG6200 MOQ: 4000 pc Parameter Test condition Symbol Value Unit Reverse Voltage VR 5V Forward current IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 µsIFM 200 mA Surge Forward Current tp = 100 µsIFSM 1A Power Dissipation PV 250 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb - 40 to + 85 °C Storage Temperature Range Tstg - 40 to + 100 °C Soldering Temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C Thermal Resistance Junction/ Ambient RthJA 300 K/W Parameter Test condition Symbol Min Typ. Max Unit Forward Voltage IF = 100 mA, tp = 20 ms VF 1.5 1.8 V IF = 1 A, tp = 100 µsVF 2.3 V Temp. Coefficient of VF IF = 100 mA TKVF -2.1 mV/K |
Аналогичный номер детали - TSHG620 |
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Аналогичное описание - TSHG620 |
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