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TC55VBM416AFTN55 датащи(PDF) 1 Page - Toshiba Semiconductor |
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TC55VBM416AFTN55 датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 14 page TC55VBM416AFTN55 2002-08-29 1/14 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416AFTN is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits/2,097,152 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 3 mA/MHz and a minimum cycle time of 55 ns. It is automatically placed in low-power mode at 0.9 µA standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating extreme temperature range of −40° to 85°C, the TC55VBM416AFTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM416AFTN is available in a plastic 48-pin thin-small-outline package (TSOP). FEATURES • Low-power dissipation Operating: 9 mW/MHz (typical) • Single power supply voltage of 2.3 to 3.6 V • Power down features using CE1 and CE2 • Data retention supply voltage of 1.5 to 3.6 V • Direct TTL compatibility for all inputs and outputs • Wide operating temperature range of −40° to 85°C • Standby Current (maximum): 3.6 V 15 µA 3.0 V 8 µA PIN ASSIGNMENT (TOP VIEW) PIN NAMES 48 PIN TSOP A0~A19 Address Inputs (Word Mode) A-1~A19 Address Inputs (Byte Mode) 1 CE , CE2 Chip Enable R/W Read/Write Control OE Output Enable LB , UB Data Byte Control I/O1~I/O16 Data Inputs/Outputs BYTE Byte ( ×8 mode) Enable VDD Power GND Ground NC No Connection OP* Option *: OP pin must be open or connected to GND. Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin Name A15 A14 A13 A12 A11 A10 A9 A8 A19 NC R/W CE2 OP UB LB A18 Pin No. 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Pin Name A17 A7 A6 A5 A4 A3 A2 A1 A0 1 CE GND OE I/O1 I/O9 I/O2 I/O10 Pin No. 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Pin Name I/O3 I/O11 I/O4 I/O12 VDD I/O5 I/O13 I/O6 I/O14 I/O7 I/O15 I/O8 I/O16 /A-1 GND BYTE A16 • Access Times (maximum): Access Time 55 ns 1 CE Access Time 55 ns CE2 Access Time 55 ns OE Access Time 30 ns • Package: TSOPⅠ48-P-1220-0.50 (Weight:0.51 g typ) (Normal) 25 48 24 1 |
Аналогичный номер детали - TC55VBM416AFTN55 |
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Аналогичное описание - TC55VBM416AFTN55 |
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