Power Transistors

1

Publication date: February 2003

SJD00001BED

Silicon PNP epitaxial planar type

For low-frequency output driver

Complementary to 2SC1567, 2SC1567A

■ Features

• High collector-emitter voltage (Base open) V

CEO

• Optimum for the driver stage of low-frequency and 40 W to 100 W

output amplifier

• TO-126B package which requires no insulation plate for installa-

tion to the heat sink

■ Absolute Maximum Ratings T

a

= 25°C

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

1: Emitter

2: Collector

3: Base

TO-126B-A1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

Q

R

90 to 155

130 to 220

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SA0794

−100

V

(Emitter open)

2SA0794A

−120

Collector-emitter voltage 2SA0794

−100

V

(Base open)

2SA0794A

−120

Emitter-base voltage (Collector open)

−5V

Collector current

− 0.5

A

Peak collector current

−1A

Collector power dissipation

1.2

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage

2SA0794

−100

V

(Base open)

2SA0794A

−120

Emitter-base voltage (Collector open)

−5V

Forward current transfer ratio

90

220



= −5 V, I

C

= −500 mA

50

100

Collector-emitter saturation voltage

− 0.2

− 0.4

V

Base-emitter saturation voltage

− 0.85 −1.20

V

Transition frequency

= −10 V, I

E

= 50 mA, f = 200 MHz

120

MHz

Collector output capacitance

20

30

pF

(Common base, input open circuited)

Note) The part numbers in the parenthesis show conventional part number.

8.0

+0.5

–0.1

123