поискавой системы для электроныых деталей |
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TLP321-2 датащи(PDF) 3 Page - Toshiba Semiconductor |
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TLP321-2 датащи(HTML) 3 Page - Toshiba Semiconductor |
3 / 9 page TLP321,TLP321-2,TLP321-4 2002-09-25 3 Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol TLP321 -1 TLP321 -2 TLP321 -4 Unit Forward current IF 60 50 mA Forward current derating ∆IF / °C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA / °C Pulse forward current IFP 1 (100µs pulse, 100pps) A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector -emitter voltage VCEO 80 V Emitter -collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 Circuit) PC 150 100 mW Collector power dissipation derating (1 Circuit, Ta ≥ 25°C) ∆PC / °C -1.5 -1.0 mW / °C Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation RT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.5 -1.5 mW / °C Isolation voltage (Note 1) BVS 5000 (AC, 1min., RH ≤ 60%) Vrms (Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. |
Аналогичный номер детали - TLP321-2 |
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Аналогичное описание - TLP321-2 |
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