2SK3471 datasheet(2/3 Pages) TOSHIBA

номер детали	2SK3471

подробное описание детали	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

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производитель	TOSHIBA [Toshiba Semiconductor]

домашняя страница	http://www.semicon.toshiba.co.jp/eng

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2SK3471

2002-09-04

2

Electrical Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±25 V, VDS = 0 V

¾

±10

mA

Drain-source breakdown voltage

V (BR) GSS

IG = ±10 mA, VDS = 0 V

±30

¾

V

Drain cut-OFF current

IDSS

VDS = 500 V, VGS = 0 V

¾

100

mA

Drain-source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

500

¾

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

2.0

¾

4.0

V

Drain-source ON resistance

RDS (ON)

VGS = 10 V, ID = 0.25 A

¾

10

18

W

Forward transfer admittance

ïYfsï

VDS = 10 V, ID = 0.25 A

0.2

0.4

¾

S

Input capacitance

Ciss

¾

75

¾

Reverse transfer capacitance

Crss

¾

7

¾

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

¾

24

¾

pF

Rise time

tr

¾

11

¾

Turn-ON time

ton

¾

18

¾

Fall time

tf

¾

54

¾

Switching time

Turn-OFF time

toff

¾

95

¾

ns

Total gate charge

(gate-source plus gate-drain)

Qg

¾

3.8

¾

Gate-source charge

Qgs

¾

1.9

¾

Gate-drain (“miller”) charge

Qgd

VDD ~- 400 V, VGS = 10 V, ID = 0.5 A

¾

1.9

¾

nC

Source-Drain Ratings and Characteristics (Ta

==== 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current (Note 1)

IDR

¾

0.5

A

Pulse drain reverse current

(Note 1)

IDRP

¾

1.5

A

Forward voltage (diode)

VDSF

IDR = 0.5 A, VGS = 0 V

¾

-1.5

V

Reverse recovery time

trr

¾

190

¾

ns

Reverse recovery charge

Qrr

IDR = 0.5 A, VGS = 0 V,

dIDR/dt = 100 A/ms

¾

380

¾

nC

Duty <= 1%, tw = 10 ms

0 V

10 V

VGS

RL = 1 kW

VDD ~- 250 V

ID = 0.25 A

VOUT

Аналогичный номер детали - 2SK3471

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SK3471	154Kb / 3P	Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications
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Аналогичное описание - 2SK3471

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SK3407	230Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
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	2SK3310	234Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
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Аналогичный номер детали - 2SK3471

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