поискавой системы для электроныых деталей |
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TSM120NA03CR датащи(PDF) 4 Page - Taiwan Semiconductor Company, Ltd |
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TSM120NA03CR датащи(HTML) 4 Page - Taiwan Semiconductor Company, Ltd |
4 / 6 page TSM120NA03CR Taiwan Semiconductor 4 Version: B1610 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Capacitance vs. Drain-Source Voltage BVDSS vs. Junction Temperature Maximum Safe Operating Area, Junction-to-Case Source-Drain Diode Forward Current vs. Voltage Normalized Thermal Transient Impedance, Junction-to-Case t, Square Wave Pulse Duration (sec) VDS, Drain to Source Voltage (V) TJ, Junction Temperature (°C) 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 25℃ 150℃ -55℃ 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 CISS COSS CRSS 0.8 0.9 1 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 I D=1mA 1 10 100 0.1 1 10 100 V DS, Drain to Source Voltage (V) R DS(ON) SINGLE PULSE RӨJC=3.8°C/W T C=25°C 200 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 SINGLE PULSE RӨJC=3.8°C/W Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single VSD, Body Diode Forward Voltage (V) Notes: Duty = t 1 / t 2 T J = T C + P DM x Z ӨJC x RӨJC |
Аналогичный номер детали - TSM120NA03CR |
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Аналогичное описание - TSM120NA03CR |
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