TSM150P03PQ33 datasheet(4/6 Pages) TSC

номер детали	TSM150P03PQ33

подробное описание детали	TSM150P03PQ33

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TSM150P03PQ33

Taiwan Semiconductor

4

Version: C1703

On-Resistance vs. Drain Current

On-Resistance vs. Gate-Source Voltage

Maximum Safe Operating Area, Junction-to-Case

Normalized Thermal Transient Impedance, Junction-to-Case

t, Square Wave Pulse Duration (sec)

0.01

0.1

1

10

0.0001

0.001

0.01

0.1

SINGLE PULSE

RӨJC=4.5°C/W

Duty=0.5

Duty=0.2

Duty=0.1

Duty=0.05

Duty=0.02

Duty=0.01

Single

0.1

1

10

100

1000

0.1

1

10

100

-V

DS, Drain to Source Voltage (V)

R

DS(ON)

SINGLE PULSE

RӨJC=4.5°C/W

T

C=25°C

-ID, Drain Current (A)

-VGS, Gate to Source Voltage (V)

0

0.005

0.01

0.015

0.02

0.025

0.03

0

6

12

18

24

30

V

GS=-10V

V

GS=-4.5V

0

0.01

0.02

0.03

0.04

0.05

0.06

3

4

5

6

7

8

9

10

I

D=-10A

Notes:

Duty = t

1

/ t

2

T

J

= T

C

+ P

DM

x Z

ӨJC x RӨJC

Аналогичный номер детали - TSM150P03PQ33

производитель	номер детали	датащи	подробное описание детали
Taiwan Semiconductor Co...	TSM150P03PQ33RGG	393Kb / 6P	P-Channel Power MOSFET

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