поискавой системы для электроныых деталей |
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BF1212 датащи(PDF) 2 Page - NXP Semiconductors |
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BF1212 датащи(HTML) 2 Page - NXP Semiconductors |
2 / 15 page 2003 Nov 14 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Excellent low frequency noise performance • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS • Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively. PINNING PIN DESCRIPTION 1 source 2 drain 3 gate 2 4 gate 1 handbook, 2 columns Top view MSB014 12 3 4 Fig.1 Simplified outline (SOT143B). BF1212; marking code: LGp handbook, 2 columns Top view MSB035 1 2 4 3 Fig.2 Simplified outline (SOT143R). BF1212R; marking code: LKp handbook, halfpage Top view MSB842 21 4 3 Fig.3 Simplified outline (SOT343R). BF1212WR; marking code: ML QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 6V ID drain current −− 30 mA Ptot total power dissipation −− 180 mW y fs forward transfer admittance 28 33 43 mS Cig1-ss input capacitance at gate 1 − 1.7 2.2 pF Crss reverse transfer capacitance f = 1 MHz − 15 30 fF F noise figure f = 800 MHz − 1.1 1.8 dB Xmod cross-modulation input level for k = 1 % at 40 dB AGC 100 104 − dB µV Tj junction temperature −− 150 °C |
Аналогичный номер детали - BF1212 |
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Аналогичное описание - BF1212 |
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