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RN4901FE датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали RN4901FE
подробное описание детали  TOSHIBA Transistor Silicon PNP - NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN4901FE датащи(HTML) 2 Page - Toshiba Semiconductor

  RN4901FE Datasheet HTML 1Page - Toshiba Semiconductor RN4901FE Datasheet HTML 2Page - Toshiba Semiconductor RN4901FE Datasheet HTML 3Page - Toshiba Semiconductor RN4901FE Datasheet HTML 4Page - Toshiba Semiconductor  
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RN4901FE
2003-01-10
2
Maximum Ratings (Ta
==== 25°C) (Q1)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-10
V
Collector current
IC
-100
mA
Maximum Ratings (Ta
==== 25°C) (Q2)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
10
V
Collector current
IC
100
mA
Maximum Ratings (Ta
==== 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector power dissipation
PC (Note)
100
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: Total rating


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