поискавой системы для электроныых деталей |
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TLP330 датащи(PDF) 2 Page - Toshiba Semiconductor |
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TLP330 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLP330 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF ±150 mA Forward current derating (Ta ≥ 25°C) ∆IF /°C -1.5 mA /°C Peak forward current (100µs pulse,100pps) IFP ±1 A Junction temperature Tj 125 °C Collector -emitter voltage VCEO 55 V Collector -base voltage VCBO 80 V Emitter -collector voltage VECO 7 V Emitter -base voltage VEBO 7 V Collector current IC 80 mA Power dissipation PC 150 mW Power dissipation derating (Ta ≥ 25°C) ∆PC /°C -1.5 mW /°C Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW Total package power dissipation derating (Ta≥25°C) ∆PT /°C -2.5 mW /°C Isolation voltage (AC, 1 min, R.H. ≤ 60%) (Note 1) BVS 5000 Vrms (Note 1) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF(RMS) ― 20 120 mA Collector current IC ― 1 10 mA Operating temperature Topr -25 ― 85 °C |
Аналогичный номер детали - TLP330 |
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Аналогичное описание - TLP330 |
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