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CY7C1460KV33 датащи(PDF) 1 Page - Cypress Semiconductor |
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CY7C1460KV33 датащи(HTML) 1 Page - Cypress Semiconductor |
1 / 31 page 36-Mbit (1M × 36/2M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC) CY7C1460KV33 CY7C1460KVE33 CY7C1462KVE33 Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-66680 Rev. *L Revised February 8, 2018 36-Mbit (1M × 36/2M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC) Features ■ Pin-compatible and functionally equivalent to Zero Bus Turnaround (ZBT™) ■ Supports 250-MHz bus operations with zero wait states ❐ Available speed grades are 250, 200, and 167 MHz ■ Internally self-timed output buffer control to eliminate the need to use asynchronous OE ■ Fully-registered (inputs and outputs) for pipelined operation ■ Byte write capability ■ 3.3-V power supply ■ 3.3-V/2.5-V I/O power supply ■ Fast clock-to-output time ❐ 2.5 ns (for 250-MHz device) ■ Clock enable (CEN) pin to suspend operation ■ Synchronous self-timed writes ■ CY7C1460KV33, CY7C1460KVE33, CY7C1462KVE33 available in JEDEC-standard Pb-free 100-pin TQFP, Pb-free and non Pb-free 165-ball FBGA packages ■ IEEE 1149.1 JTAG-compatible boundary scan ■ Burst capability—linear or interleaved burst order ■ “ZZ” sleep mode option ■ On-chip Error Correction Code (ECC) to reduce Soft Error Rate (SER) Functional Description The CY7C1460KV33/CY7C1460KVE33/CY7C1462KVE33 are 3.3 V, 1M × 36, and 2M × 18 synchronous pipelined burst SRAMs with No Bus Latency™ (NoBL™) logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. The CY7C1460KV33/CY7C1460KVE33/CY7C1462KVE33 devices are equipped with the advanced (NoBL) logic required to enable consecutive read/write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data in systems that require frequent write and read transitions. The CY7C1460KV33/CY7C1460KVE33/CY7C1462KVE33 devices are pin-compatible and functionally equivalent to ZBT devices. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the clock enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Write operations are controlled by the byte write selects (BWa–BWd for CY7C1460KV33/CY7C1460KVE33 and BWa–BWb for CY7C1462KVE33) and a write enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous chip enables (CE1, CE2, and CE3) and an asynchronous output enable (OE) enable easy bank selection and output tristate control. To avoid bus contention, the output drivers are synchronously tristated during the data portion of a write sequence. Selection Guide Description 250 MHz 200 MHz 167 MHz Unit Maximum access time 2.5 3.2 3.4 ns Maximum operating current × 18 220 190 170 mA × 36 240 210 190 |
Аналогичный номер детали - CY7C1460KV33 |
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Аналогичное описание - CY7C1460KV33 |
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