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TC58FVB160AXB-10 датащи(PDF) 6 Page - Toshiba Semiconductor

номер детали TC58FVB160AXB-10
подробное описание детали  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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TC58FVB160AXB-10 датащи(HTML) 6 Page - Toshiba Semiconductor

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TC58FVT160/B160AFT/AXB-70,-10
2002-08-06
6/41
OPERATION MODES
In addition to the Read, Write and Erase Modes, the TC58FVT160/B160A features many functions including block
protection and data polling. When incorporating the device into a deign, please refer to the timing charts and
flowcharts in combination with the description below.
READ MODE
To read data from the memory cell array, set the device to Read Mode. In Read Mode the device can perform
high-speed random access as asynchronous ROM.
The device is automatically set to Read Mode immediately after power-on or on completion of automatic
operation. A software reset releases ID Read Mode and the lock state which the device enters if automatic
operation ends abnormally, and sets the device to Read Mode. A hardware reset terminates operation of the
device and resets it to Read Mode. When reading data without changing the address immediately after power-on,
either input a hardware Reset or change CE from H to L.
ID Read Mode
ID Read Mode is used to read the device maker code and device code. The mode is useful in that it allows
EPROM programmers to identify the device type automatically.
ID read can be executed in two ways, as follows:
(1) Applying VID to A9
This method is used mainly by EPROM programmers. Applying VID to A9 sets the device to ID Read Mode,
outputting the maker code from address 00H and the device code from address 01H. Releasing VID from A9
returns the device to Read Mode.
(2) Input command sequence
Inputting an ID Read command sets to ID Read Mode. The maker code is output from address 00; the
device code is output from address 01. Inputting a Reset command releases ID Read Mode and returns the
device to Read Mode.
Access time in ID Read Mode is the same as that in Read Mode. For a list of the codes, please refer to the
ID Code Table.
Standby Mode
There are two ways to put the device into Standby Mode.
(1) Control using CE and RESET
With the device in Read Mode, input VDD ± 0.3 V to CE and RESET . The device will enter Standby
Mode and the current will be reduced to the standby current (IDDS1).
(2) Control using RESET only
With the device in Read Mode, input VSS ± 0.3 V to RESET . The device will enter Standby Mode and the
current will be reduced to the standby current (IDDS1).
In Standby Mode DQ is put in High-Impedance state.
Auto-Sleep Mode
This function suppresses power dissipation during reading. If the address input does not change for 150 ns, the
device will automatically enter Sleep Mode and the current will be reduced to the standby current (IDDS2).
Because the output data is latched, data is output in Sleep Mode. When the address is changed, Sleep Mode is
automatically released, and data from the new address is output.


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