IRFPS37N50A_17 datasheet(2/9 Pages) VISHAY

номер детали	IRFPS37N50A

подробное описание детали	Power MOSFET

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Document Number: 91258

2

S11-0111-Rev. C, 07-Feb-11

IRFPS37N50A, SiHFPS37N50A

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-40

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.24

-

Maximum Junction-to-Case (Drain)

RthJC

-0.28

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

500

-

V

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 30 V

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

-

25

μA

VDS = 400 V, VGS = 0 V, TJ = 150 °C

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 22 Ab

-

0.13



Forward Transconductance

gfs

VDS = 50 V, ID = 22 Ab

20

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

-

5579

-

pF

Output Capacitance

Coss

-

810

-

Reverse Transfer Capacitance

Crss

-36

-

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V , f = 1.0 MHz

-

7905

-

VDS = 400 V , f = 1.0 MHz

-

221

-

Effective Output Capacitance

Coss eff.

VDS = 0 V to 400 V

-

400

-

Total Gate Charge

Qg

VGS = 10 V

ID = 36 A, VDS = 400 V,

see fig. 6 and 13b

-

180

nC

Gate-Source Charge

Qgs

--

46

Gate-Drain Charge

Qgd

--

71

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 36 A,

RG = 2.15 , RD = 7.0

see fig. 10b

-23

-

ns

Rise Time

tr

-98

-

Turn-Off Delay Time

td(off)

-52

-

Fall Time

tf

-80

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

36

A

Pulsed Diode Forward Currenta

ISM

-

144

Body Diode Voltage

VSD

TJ = 25 °C, IS = 36 A, VGS = 0 Vb

--

1.5

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 36 A, dI/dt = 100 A/μsb

-

570

860

ns

Body Diode Reverse Recovery Charge

Qrr

-

8.6

13

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

S

D

G

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