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AM29PL320DT90 датащи(PDF) 4 Page - SPANSION |
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AM29PL320DT90 датащи(HTML) 4 Page - SPANSION |
4 / 50 page 2 Am29PL320D October 2, 2003 GENERAL DESCRIPTION The Am29PL320D is a 32 Mbit, 3.0 Volt-only page mode Flash memory device organized as 2,097,152 words or 1,048,576 double words. The device is of- fered in an 84-ball FBGA package. The word-wide data (x16) appears on DQ15–DQ0; the double word- wide (x32) data appears on DQ31–DQ0. The device is available in both top and bottom boot versions. This device can be programmed in-system or with in stan- dard EPROM programmers. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device offers fast page access times of 20, 25, and 35 ns, with corresponding random access times of 60, 70, 90 ns, respectively, allowing high speed micro- processors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#), and output enable (OE#) controls. Page Mode Features The device is AC timing, input, output, and package compatible with 16 Mbit x 16 page mode Mask ROM. The page size is 8 words or 4 double words. After initial page access is accomplished, the page mode operation provides fast read access speed of random locations within that page. Standard Flash Memory Features The device requires only a single 3.0 volt power sup- ply for both read and write functions. Inter nally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register con- tents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cy- cles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algor ithm—an inter nal alg orithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase com- mand sequence. This initiates the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sec- tors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write opera- tions during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of mem- or y. Thi s c an be ac hie v ed in-s y s t e m or v i a programming equipment. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. The SecSi ™ Sector (Secured Silicon) is an extra sec- tor capable of being permanently locked by AMD or customers. The SecSi Indicator Bit (DQ7) is perma- nently set to a 1 if the part is factory locked, and set to a 0 if customer lockable. This way, customer lock- able parts can never be used to replace a factory locked par t. Current version of device has 512 words (256 double words); future versions will have only 128 words (64 double words). This should be considered during system design. Fac- tory locked parts can store a secure, random 16 byte ESN (Electronic Serial Number), customer code (pro- grammed through AMD’s ExpressFlash service), or both. Customer Lockable parts may be programmed after being shipped from AMD. AMD’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection. |
Аналогичный номер детали - AM29PL320DT90 |
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Аналогичное описание - AM29PL320DT90 |
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