MTB010N06RJ3 datasheet(3/9 Pages) CYSTEKEC

номер детали	MTB010N06RJ3

подробное описание детали	N-Channel Enhancement Mode Power MOSFET

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производитель	CYSTEKEC [Cystech Electonics Corp.]

домашняя страница	http://www.cystekec.com

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3 / 9 page

CYStech Electronics Corp.

Spec. No. : C016J3

Issued Date : 2018.04.11

Revised Date : 2018.04.12

Page No. : 3/ 9

MTB010N06RJ3

CYStek Product Specification

Characteristics (Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

60

-

V

VGS=0V, ID=250μA

∆BVDSS/∆Tj

-

0.04

-

V/

°C

Reference to 25

°C, ID=250μA

VGS(th)

1.0

-

2.5

V

VDS = VGS, ID=250μA

*GFS

-

9.5

-

S

VDS =10V, ID=5A

IGSS

-

±

100

nA

VGS=±20V, VDS=0V

-

1

VDS =48V, VGS =0V

IDSS

-

10

μA

VDS =48V, VGS =0V, Tj=125

°C

-

10.3

14.5

VGS =10V, ID=20A

*RDS(ON)

-

15.8

24.5

mΩ

VGS =4.5V, ID=20A

Dynamic

*Qg

-

25.6

-

*Qgs

-

5.6

-

*Qgd

-

4.9

-

nC

VDD=48V, ID=20A,VGS=10V

*td(ON)

-

14

-

*tr

-

14.6

-

*td(OFF)

-

36.2

-

*tf

-

6

-

ns

VDD=30V, ID=20A, VGS=10V, RG=1Ω

Ciss

-

1544

-

Coss

-

180

-

Crss

-

24

-

pF

VGS=0V, VDS=30V, f=1MHz

Rg

-

1.5

-

Ω

f=1MHz

Source-Drain Diode

*IS

-

43

*ISM

-

172

A

*VSD

-

0.74

1

V

IS=1A, VGS=0V

*trr

-

18.5

-

ns

*Qrr

-

11

-

nC

VGS=0, IF=1A, dIF/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

Аналогичный номер детали - MTB010N06RJ3

производитель	номер детали	датащи	подробное описание детали
Cystech Electonics Corp...	MTB010N06RI3	605Kb / 8P	N-Channel Enhancement Mode Power MOSFET
	MTB010N06RI3-0-UA-G	605Kb / 8P	N-Channel Enhancement Mode Power MOSFET
	MTB010N06RQ8	310Kb / 9P	N-Channel Enhancement Mode Power MOSFET
	MTB010N06RQ8-0-T3-G	310Kb / 9P	N-Channel Enhancement Mode Power MOSFET

More results

Аналогичное описание - MTB010N06RJ3

производитель	номер детали	датащи	подробное описание детали
Microsemi Corporation	MSAFA75N10C	83Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GTM CORPORATION	GP9973	335Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE20N03	296Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2304A	371Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G111K	366Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G138	324Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G301K	296Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2N7002K	368Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE85T03	246Kb / 4P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE88L02	253Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GE40N03	251Kb / 5P	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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