поискавой системы для электроныых деталей |
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MTB050P03KN3-0-T1-G датащи(PDF) 5 Page - Cystech Electonics Corp. |
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MTB050P03KN3-0-T1-G датащи(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C017N3 Issued Date : 2018.03.16 Revised Date : Page No. : 5/9 MTB050P03KN3 CYStek Product Specification Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250 μA ID=-1mA Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs TA=25°C, Tj=150°C, VGS=-10V, RθJA=90°C/W Single Pulse 1s RDS(ON) Limited Maximum Drain Current vs JunctionTemperature 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=-10V, RθJA=90°C/W Typical Transfer Characteristics 0 4 8 12 16 20 012 345 -VGS, Gate-Source Voltage(V) -VDS=10V Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -ID, Drain Current(A) Pulsed Ta=25°C VDS=-10V Single Pulse Power Rating, Junction to Ambient (Note 1 on page 2) 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 Pulse Width(s) TJ(MAX)=150°C TA=25°C RθJA=90°C/W |
Аналогичный номер детали - MTB050P03KN3-0-T1-G |
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Аналогичное описание - MTB050P03KN3-0-T1-G |
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