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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF200S234 датащи(PDF) 5 Page - Infineon Technologies AG |
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IRF200S234 датащи(HTML) 5 Page - Infineon Technologies AG |
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5 / 18 page  Final Datasheet 5 V2.0 2017-06-30 IR MOSFET-StrongIRFET™ IRF200S234 D S G Table 6 Dynamic characteristics Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward Trans conductance gfs VDS = 50V, ID = 51A 96 - - S Total Gate Charge Qg - 108 162 nC Gate-to-Source Charge Qgs - 26 - Gate-to-Drain Charge Qgd - 37 - Total Gate Charge Sync. (Qg– Qgd) Qsync - 71 - Turn-On Delay Time td(on) VDD = 100V - 21 - ns Rise Time tr ID = 51A - 58 - Turn-Off Delay Time td(off) RG= 2.7 - 67 - Fall Time tf VGS = 10V - 37 - Input Capacitance Ciss VGS = 0V - 6484 - pF Output Capacitance Coss VDS = 50V - 462 - Reverse Transfer Capacitance Crss ƒ = 1.0MHz, See Fig.7 - 142 - Effective Output Capacitance (Energy Related) Cosseff.(ER) VGS = 0V, VDS = 0V to 160V - 356 - Output Capacitance (Time Related) Cosseff.(TR) VGS = 0V, VDS = 0V to 160V - 491 - ID = 51A VDS = 100V VGS = 10V Table 7 Reverse Diode Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous Source Current IS MOSFET symbol - - 90 A (Body Diode) showing the Pulsed Source Current integral reverse - - 312 (Body Diode) p-n junction diode. Diode Forward Voltage VSD TJ = 25°C, IS= 51A,VGS = 0V - - 1.3 V Peak Diode Recovery dv/dt dv/dt TJ = 175°C, IS = 51A,VDS = 200V - 26 - V/ns Reverse Recovery Time trr TJ = 25°C - 117 - ns TJ = 125°C - 140 - Reverse Recovery Charge Qrr TJ = 25°C - 563 - nC TJ = 125°C - 801 - Reverse Recovery Current IRRM TJ = 25°C - 8.7 - A ISM VDD = 170V IF = 51A, di/dt = 100A/µs Table 5 Static characteristics Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 200 - - V Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 3.0mA - 0.18 - V/°C Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 51A - 14 16.9 m Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0 V Drain-to-Source Leakage Current IDSS VDS = 200V, VGS =0V - - 20 µA VDS = 200V,VGS = 0V,TJ =125°C - - 250 Gate-to-Source Forward Leakage IGSS VGS = 20V - - 100 nA Gate Resistance RG - 2.4 - Gate-to-Source Reverse Leakage IGSS VGS = -20V - - -100 nA 3 Electrical characteristics Electrical characteristics |
Аналогичный номер детали - IRF200S234 |
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Аналогичное описание - IRF200S234 |
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