BD204 datasheet(2/3 Pages) ETC

номер детали	BD204

подробное описание детали	PNP PLASTIC POWER TRANSISTORS

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Continental Device India Limited

Data Sheet

Page 2 of 3

Collector current (peak tp = 10 ms)

ICM

max.

12

A

Collector current (non-repetitive peak tp = 2 ms) ICSM

max.

25

A

Base current

IB

max.

3.0

A

Total power dissipation up to Tmb = 25°C

Ptot

max.

60

W

Junction temperature

Tj

max.

150

°C

Storage temperature

Tstg

–65 to +150

ºC

THERMAL RESISTANCE

From junction to ambient

Rth j–a

70

K /W

CHARACTERISTICS

Tamb = 25°C unless otherwise specified

202 204 BDX78

Collector cutoff current

IB = 0; VCE = 30 V

ICEO

max.

0.2

mA

IB = 0; VCB = 40 V; Tj = 150°C

ICBO

max.

1.0

mA

Emitter cut-off current

IC = 0; VEB = 5 V

IEBO

max.

0.5

mA

Breakdown voltages

IC = 0.2 A; IB = 0

VCEO

min.

45

60

80

V

IC = 1 mA; IE = 0

VCBO

min.

60

100

V

IE = 1 mA; IC = 0

VEBO

min.

5.0

V

Saturation voltages

IC = 3 A; IB = 0.3 A

VCEsat* max.

1.0

V

IC = 6 A; IB = 0.6 A

VCEsat* max.

1.5

V

VBEsat* max.

2.0

V

Base-emitter on voltage

IC = 3 A; VCE = 2 V

VBE(on)* max.

1.5

V

D.C. current gain

IC = 1 A; VCE = 2 V

hFE*

min.

–

30

IC = 2 A; VCE = 2 V

hFE*

min.

–

30

–

IC = 3 A; VCE = 2 V

hFE*

min.

30

–

Common emitter small

IC = 0.3 A; VCE = 3 V

fhfe

min.

25

KHz

Transition frequency

IC = 0.3 A; VCE = 3 V; f = 1 MHz

fT

min.

7.0

MHz

Second breakdown collector current

with base forward biased (non-repetitive)

VCE = 40 V; tp = 0.1 s

IS/b

min.

1.5

A

Switching time

ICon = 2A; IBon = IBoff = 0.2A

Turn on time

ton

max.

1

µs

Turn off time

toff

max.

2

µs

* Pulse test: tp ≤ 300 µs; duty cycle ≤ 2%.

BD202, BD204, BDX78

Аналогичный номер детали - BD204

производитель	номер детали	датащи	подробное описание детали
General Semiconductor	BD204	109Kb / 3P	EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
Savantic, Inc.	BD204	90Kb / 3P	Silicon PNP Power Transistors
Comset Semiconductor	BD204	193Kb / 3P	SILCON EPITAXIAL-BASE POWER TRANSISTORS
Comset Semiconductor	BD204	194Kb / 3P	SILCON EPITAXIAL-BASE POWER TRANSITORS
Inchange Semiconductor ...	BD204	132Kb / 3P	Silicon PNP Power Transistors

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Continental Device Indi...	CSB631	125Kb / 3P	PNP PLASTIC POWER TRANSISTORS
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TRANSYS Electronics Lim...	BD136	53Kb / 2P	PNP PLASTIC POWER TRANSISTORS
Continental Device Indi...	CSA1220	150Kb / 3P	PNP PLASTIC POWER TRANSISTORS
Boca Semiconductor Corp...	2N6486	26Kb / 2P	NPN/PNP PLASTIC POWER TRANSISTORS
Continental Device Indi...	BDX33	188Kb / 4P	NPN/PNP PLASTIC POWER TRANSISTORS
Continental Device Indi...	CSB857	82Kb / 3P	PNP / NPN PLASTIC POWER TRANSISTORS
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