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STE26N50 датащи(PDF) 2 Page - STMicroelectronics

номер детали STE26N50
подробное описание детали  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE26N50 датащи(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthc-h
Thermal Resist ance Junct ion-case
Max
Thermal Resist ance Case-heatsink With Conduct ive
Grease Applied
Max
0.42
0.05
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1 mA
VGS = 0 V
500
V
IDSS
Zero Gate Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating x 0.8
Tc =125
oC
200
1
µA
mA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 200
nA
ON (
∗)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS =VGS
ID =1 mA
2
4
V
RDS(on)
St atic Drain-source On
Resist ance
VGS =10V
ID =13 A
0.2
DYNAMIC
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
gfs (
∗)Forward
Transconductance
VDS =15 V
ID =13 A
12
S
Ciss
Coss
Crss
I nput Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS =0 V
6
1200
500
nF
pF
pF
SWITCHING ON
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
td(on)
tr
Turn-on Time
Rise Time
VDD =250 V
ID =13 A
RG =4.7
VGS =10 V
(see test circuit, figure 1)
60
80
ns
ns
(di/dt) on
Turn-on Current Slope
VDD = 400 V
ID =26 A
RG =4.7
VGS =10 V
(see test circuit, figure 3)
450
A/
µs
Qg
Total Gate Charge
VDD = 400 V
ID =26 A
VGS =10 V
275
nC
STE26N50
2/8


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