Specification Comparison

Vishay Siliconix

Document Number 74071

www.vishay.com

11-May-05

TP0101K vs. TP0101T

Description:

P-Channel,20-V (D-S) MOSFET, Low Threshold

Package:

SOT-23

Pin Out:

Identical

Part Number Replacements:

TP0101K-T1-E3 Replaces TP0101T-T1-E3

TP0101K-T1-E3 Replaces TP0101T-T1

Summary of Performance:

The TP0101K is a technology upgrade with ESD protection to the original TP0101T. The ESD protection diodes on the gate

increases Gate-Body Leakage; otherwise, there is little variation regarding performance.

Parameter

Symbol

TP0101K

TP0101T

Unit

Drain-Source Voltage

-20

-20

Gate-Source Voltage

+8

+8

V

-0.58

-0.6

Continuous Drain Current

-0.46

-0.48

Pulsed Drain Current

-2

-3

Continuous Source Current

(MOSFET Diode Conduction)

-0.3

-0.6

A

0.35

0.35

Power Dissipation

0.22

0.22

W

Operating Junction & Storage Temperature Range

-55 to 150

-55 to 150

°C

Maximum Junction-to-Ambient

357

357

°C/W

TP0101K

TP0101T

Parameter

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Static

Gate-Threshold Voltage

-0.5

-0.7

-1.0

-0.5

-0.9

-1.5

V

Gate-Body Leakage

+5000

+100

nA

Zero Gate Voltage Drain Current

-1

-1

µA

-1.2

-2.5

On-State Drain Current

-0.5

-0.5

A

0.42

0.65

0.45

0.65

Drain-Source On-Resistance

0.64

0.85

0.69

0.85

Ω

Forward Transconductance

1300

1300

S

Diode Forward Voltage

-0.9

-1.2

-0.9

-1.2

V

Dynamic

Total Gate Charge

Qg

1400

2200

2020

3000

Gate-Source Charge

Qgs

300

180

Gate-Drain Charge

Qgd

250

720

nC

Gate Resistance

Rg

150

NS

Ω

Switching

a

25

35

7

12

Turn-On Time

30

45

25

35

55

85

19

30

Turn-Off Time

38

60

9

15

ns

NS denotes not specified in original datasheet