поискавой системы для электроныых деталей |
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ISCC18124 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCC18124 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor ISCC18124 FEATURES · Drain Current –ID= 230A@ TC=25℃ · Drain Source Voltage- : VDSS= 60V(Min) · Static Drain-Source On-Resistance : RDS(on) =3mΩ(Max) · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power switching application · Hard switched and high frequency circuits · Uninterruptible power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 230 A IDM Drain Current-Single Pluse 800 A PD Total Dissipation @TC=25℃ 300 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.5 ℃ /W |
Аналогичный номер детали - ISCC18124 |
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Аналогичное описание - ISCC18124 |
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