2SC4026 datasheet(1/3 Pages) PANASONIC

номер детали	2SC4026

подробное описание детали	For high breakdown voltage high-speed switching

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производитель	PANASONIC [Panasonic Semiconductor]

домашняя страница	http://www.panasonic.com/industrial/

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1

Power Transistors

2SC4026

Silicon NPN triple diffusion planar type

For high breakdown voltage high-speed switching

s Features

q

High-speed switching

q

High collector to base voltage VCBO

q

Wide area of safe operation (ASO)

q

Satisfactory linearity of foward current transfer ratio hFE

q

Full-pack package which can be installed to the heat sink with

one screw

s Absolute Maximum Ratings (T

C=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCES

VCEO

VEBO

ICP

IC

IB

PC

Tj

Tstg

Ratings

500

400

7

10

5

1.5

35

2

150

–55 to +150

Unit

V

A

W

˚C

TC=25°C

Ta=25

°C

s Electrical Characteristics (T

C=25˚C)

Parameter

Collector cutoff current

Emitter cutoff current

Collector to emitter voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

Symbol

ICBO

IEBO

VCEO

hFE1

hFE2

VCE(sat)

VBE(sat)

fT

ton

tstg

tf

Conditions

VCB = 500V, IE = 0

VEB = 5V, IC = 0

IC = 10mA, IB = 0

VCE = 5V, IC = 0.1A

VCE = 5V, IC = 2A

IC = 2A, IB = 0.4A

VCE = 10V, IC = 0.5A, f = 1MHz

IC = 2A, IB1 = 0.4A, IB2 = – 0.8A,

VCC = 150V

min

400

15

8

typ

5

max

100

1.0

1.5

0.7

2.0

0.3

Unit

µA

V

MHz

µs

Unit: mm

1:Base

2:Collector

3:Emitter

TO–220 Full Pack Package(a)

10.0

±0.2

5.5

±0.2

0.5

+0.2

–0.1

1.4

±0.1

1.3

±0.2

0.8

±0.1

2.54

±0.25

5.08

±0.5

2

13

2.7

±0.2

4.2

±0.2

φ3.1±0.1

Аналогичный номер детали - 2SC4026

производитель	номер детали	датащи	подробное описание детали
Savantic, Inc.	2SC4026	133Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC4026	184Kb / 4P	Silicon NPN Power Transistors
Inchange Semiconductor ...	2SC4026	156Kb / 4P	Silicon NPN Power Transistors
Savantic, Inc.	2SC4026	135Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC4026	184Kb / 4P	Silicon NPN Power Transistors

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Аналогичное описание - 2SC4026

производитель	номер детали	датащи	подробное описание детали
Siemens Semiconductor G...	BAW78A-BAW79D	86Kb / 3P	Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode)
Panasonic Semiconductor	2SC5034	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC5457	37Kb / 2P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3795	63Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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	2SC3973	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3975	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC4152	59Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
	2SC3978	60Kb / 3P	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
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Аналогичный номер детали - 2SC4026

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