Preliminary Data Sheet D14646EJ1V0DS

2

2SJ601

Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Zero Gate Voltage Drain Current

–10

µA

Gate Leakage Current

µA

Gate Cut-off Voltage

1.5

2.0

2.5

V

Forward Transfer Admittance

30

S

31

m

Ω

Drain to Source On-state Resistance

46

m

Ω

Input Capacitance

3300

pF

Output Capacitance

580

pF

Reverse Transfer Capacitance

f = 1 MHz

230

pF

Turn-on Delay Time

ns

Rise Time

ns

Turn-off Delay Time

Ω

80

ns

Fall Time

53

ns

Total Gate Charge

nC

Gate to Source Charge

nC

Gate to Drain Charge

nC

Body Diode Forward Voltage

V

Reverse Recovery Time

ns

Reverse Recovery Charge

di/dt = –100 A /

µs

108

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

Ω

50

Ω

PG

L

→ 0 V

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG.

0

−)

D.U.T.

τ = 1 s

µ

Duty Cycle

≤ 1%

Wave Form

Wave Form

−)

10%

90%

10%

0

−)

90%

90%

10%

τ

0

PG.

50

Ω

D.U.T.

−2 mA

−