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SI4435BDY датащи(PDF) 2 Page - Vishay Siliconix |
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SI4435BDY датащи(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model Si4435BDY SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 µA 1.9 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −10 V 309 A VGS = −10 V, ID = −9.1 A 0.015 0.015 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −6.9 A 0.025 0.025 Ω Forward Transconductance a gfs VDS = −10 V, ID = −9.1 A 22 24 S Diode Forward Voltage a VSD IS = −2.1 A, VGS = 0 V −0.81 −0.80 V Dynamic b Total Gate Charge Qg 32 33 Gate-Source Charge Qgs 5.8 5.8 Gate-Drain Charge Qgd VDS = −15 V, VGS = −10 V, ID = −9.1 A 8.6 8.6 nC Turn-On Delay Time td(on) 19 10 Rise Time tr 14 15 Turn-Off Delay Time td(off) 184 110 Fall Time tf VDD = −15 V, RL = 15 Ω ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω 35 70 Source-Drain Reverse Recovery Time trr IF = −2.1 A, di/dt = 100 A/µs 55 60 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72297 S-51095 Rev. B, 13-Jun-05 |
Аналогичный номер детали - SI4435BDY |
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Аналогичное описание - SI4435BDY |
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