STW4N150 datasheet(3/11 Pages) STMICROELECTRONICS

номер детали	STW4N150

подробное описание детали	N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET

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STP4N150 - STW4N150

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 7: Dynamic

Table 8: Source Drain Diode

(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(2) Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS = 30 V , ID = 2 A

3.5

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1300

120

12

pF

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off-Delay Time

Fall Time

VDD = 750 V, ID = 2 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19)

35

30

45

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 600 V, ID = 4 A,

VGS = 10 V

(see Figure 22)

30

10

9

50

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

4

12

A

VSD (1)

Forward On Voltage

ISD = 4 A, VGS = 0

2V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 4 A, di/dt = 100 A/µs

VDD = 45V

(see Figure 20)

510

3

12

ns

µC

A

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 4 A, di/dt = 100 A/µs

VDD = 45V, Tj = 150°C

(see Figure 20)

650

4

12.6

ns

µC

A

Аналогичный номер детали - STW4N150

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STW4N150	365Kb / 14P	N-channel 1500V - 5廓 - 4A - TO-220/TO-247 Very high PowerMESH??Power MOSFET
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Аналогичное описание - STW4N150

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