PH1955L_1

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 15 August 2005

3 of 12

Philips Semiconductors

PH1955L

N-channel TrenchMOS logic level FET

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature

Fig 2.

Normalized continuous drain current as a

function of mounting base temperature

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

03aa16

0

40

80

120

0

50

100

150

200

°C)

(%)

03aa24

0

40

80

120

0

50

100

150

200

(%)

P

der

P

tot

P

tot 25

C

°

()

------------------------

100 %

×

=

I

der

I

D

I

D25 C

°

()

---------------------

100 %

×

=

003aaa642

1

10

10

2

10

3

1

10

10

2

(A)

DC

100 ms

10 ms

1 ms

100

µs